Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Z. A. Alahmed"'
Autor:
Muhammad Hammad Aziz, M Fakhar-E-Alam, Mahvish Fatima, Fozia Shaheen, Seemab Iqbal, M Atif, Muhammad Talha, Syed Mansoor Ali, Muhammad Afzal, Abdul Majid, Thamir Shelih Al Harbi, Muhammad Ismail, Zhiming M Wang, M S AlSalhi, Z A Alahmed
Publikováno v:
PLoS ONE, Vol 11, Iss 3, p e0150295 (2016)
Nickel nanomaterials are promising in the biomedical field, especially in cancer diagnostics and targeted therapy, due to their distinctive chemical and physical properties. In this experiment, the toxicity of nickel nanotubes (Ni NTs) were tested in
Externí odkaz:
https://doaj.org/article/0bff686cf64242ea9f7d85dec45fb922
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:474-478
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083a003afbd559ecc3add284fd5d25ad
https://doi.org/10.1166/jno.2014.1617
https://doi.org/10.1166/jno.2014.1617
Publikováno v:
Optik. 126:575-577
We have grown the nanostructure Mn-doped CdO films by sol–gel spin coating method. The structural and morphology properties of the Mn doped CdO films were characterized by atomic force microscopy and X-ray diffraction method. The Mn doped CdO films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b687596046fe89a294c6696cc89ba469
https://doi.org/10.1016/j.ijleo.2015.01.005
https://doi.org/10.1016/j.ijleo.2015.01.005
Publikováno v:
Superlattices and Microstructures. 63:36-46
A photodiode based on Fe3O4–graphene/n-Si/Al diode was fabricated. The electrical and capacitance properties of the diode were investigated by transient current and capacitance measurements. Ag/Fe3O4–graphene/n-Si photovoltaic device gives Isc of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea2654f7fa1604a3657449797274ba7
https://doi.org/10.1016/j.spmi.2013.07.012
https://doi.org/10.1016/j.spmi.2013.07.012
Publikováno v:
Journal of Electroceramics. 32:163-168
The electrical characterization of Al/NiFe2O4/p-Si/Al photodiode was investigated by current–voltage and capacitance-voltage characteristics. The barrier height and ideality factor magnitudes of the Al/NiFe2O4/p-Si/Al diode were found to be 0.82 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a3a1ee00f94d4289f71cba901eee77
https://doi.org/10.1007/s10832-013-9862-4
https://doi.org/10.1007/s10832-013-9862-4
Publikováno v:
Journal of Electroceramics. 31:298-308
A high quality and adherent transparent layer of ZnO thin films were grown on p-type Si substrates to fabricate undoped and Ni-doped ZnO/p-Si heterojunction. The C Adj −V and G Adj −V plots of the diodes are significantly affected with the freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6121bf41a06de41437aa6db48615ac6d
https://doi.org/10.1007/s10832-013-9839-3
https://doi.org/10.1007/s10832-013-9839-3
Publikováno v:
Superlattices and Microstructures. 59:123-132
The electrical characteristics of the Al/p-Si/C 70 /Au diode were investigated by current–voltage and capacitance–voltage measurements. The current–voltage characteristics confirm that the diode is a metal–insulator–semiconductor type devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb1feb62f3e2f7679b0b311545513b8
https://doi.org/10.1016/j.spmi.2013.03.028
https://doi.org/10.1016/j.spmi.2013.03.028
Publikováno v:
Solid State Communications. 163:23-27
6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS) and poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene] (MEH-PPV) blends with different ratios were deposited onto a p-type silicon (p-Si) single crystal wafer using spin coating technique. The dar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fd3be3f6883a5a1e6f7ebd0f6a1156d
https://doi.org/10.1016/j.ssc.2013.03.015
https://doi.org/10.1016/j.ssc.2013.03.015
Publikováno v:
Journal of Electroceramics. 30:152-158
N-doped ZnO (NZO) nanocrystalline thin films were successfully synthesized via sol–gel method. The structural and optical properties of the films were characterized by various techniques including X-ray diffraction, atomic force microscopy (AFM), U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5851a9cfd09b10af47a8565e0b0bf2ec
https://doi.org/10.1007/s10832-012-9777-5
https://doi.org/10.1007/s10832-012-9777-5
Pure and boron (B) doped iron oxide (Fe2O3) nanostructured thin films were prepared by sol-gel spin coating method. The effects of B (0.1, 0.2, 0.5 and 1 %) content on the crystallinity and morphological properties of Fe2O3 films were investigated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::070cb713f42c5314faaf859577825384
https://aperta.ulakbim.gov.tr/record/88693
https://aperta.ulakbim.gov.tr/record/88693
