Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Z R Zytkiewicz"'
Publikováno v:
Nanotechnology. 30(15)
A comprehensive description of the self-assembled formation of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy (PAMBE) on amorphous-Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d987ee0a221a5ad7edd336a365c0707c
https://pubmed.ncbi.nlm.nih.gov/30641512
https://pubmed.ncbi.nlm.nih.gov/30641512
Autor:
Patrick J. McNally, M. Karilahti, Fredrik Olsson, T. Tuomi, Z. R. Zytkiewicz, Aapo Lankinen, Sebastian Lourdudoss, J. Z. Domagala, Yan-Ting Sun
Publikováno v:
Crystal Growth & Design. 6:1096-1100
Defects in epitaxial laterally overgrown (ELO) InP layers are examined by high-resolution X-ray diffraction and synchrotron X-ray back-reflection and transmission topography. X-ray diffraction maps produce information about the overall crystal qualit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1184467953c4e472391df5dff39e45
https://doi.org/10.1021/cg0503301
https://doi.org/10.1021/cg0503301
Publikováno v:
Semiconductor Science and Technology. 14:465-469
Results of epitaxial lateral overgrowth (ELO) of GaAs on (001) GaAs substrates by liquid phase epitaxy are reported. We show that by introducing Si, Sn or Te impurities to the Ga-As solution the vertical growth rate is reduced while the lateral growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee6599ed0a583881ecc164c766e4bb5a
https://doi.org/10.1088/0268-1242/14/5/316
https://doi.org/10.1088/0268-1242/14/5/316
Publikováno v:
Materials Science and Technology. 12:193-196
Results obtained for the first time using Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1−xSb (0≤x≤1) and AlxGa1−x As (0≤x≤0·4) are reported. In GaAs, free electron concentrations obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759b61cab7a4f3e68058b8ed3ae6998a
https://doi.org/10.1179/mst.1996.12.2.193
https://doi.org/10.1179/mst.1996.12.2.193
Publikováno v:
Semiconductor Science and Technology. 10:509-514
The first results obtained with a use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AI,Ga1-xSb (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300da650832b2aea0d1ff94684d4118f
https://doi.org/10.1088/0268-1242/10/4/022
https://doi.org/10.1088/0268-1242/10/4/022
Publikováno v:
Semiconductor Science and Technology. 8:1973-1976
Detailed studies of the absorption kinetics of the DX centre are presented. These studies were performed on unique thick AlGaAs:Te layers and clearly demonstrated the participation of the neutral charge state of DX as an intermediate state in the pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470c38cb9bec05295b5e0dcf5282af51
https://doi.org/10.1088/0268-1242/8/11/006
https://doi.org/10.1088/0268-1242/8/11/006
Publikováno v:
Physical Review Letters. 68:2508-2511
A high-resolution Laplace-transform deep-level-transient spectroscopy has been used to study electon emission from the DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a0ff9f06b28b31987dc3b31bad001b
https://doi.org/10.1103/physrevlett.68.2508
https://doi.org/10.1103/physrevlett.68.2508
Autor:
Z. R. Zytkiewicz, J. Domagala
Publikováno v:
Applied Physics Letters. 75:2749-2751
X-ray diffraction was used to study deformation of GaAs layers grown on Si substrates by liquid phase epitaxial lateral overgrowth (ELO). We show that, in the direction perpendicular to seeding lines, the GaAs ELO stripes bend outwards from the mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a84cd227c5e519cb347bca03852aa75
https://doi.org/10.1063/1.125137
https://doi.org/10.1063/1.125137
Autor:
D. Dobosz, Z. R. Zytkiewicz
Publikováno v:
Heterostructure Epitaxy and Devices — HEAD’97 ISBN: 9780792350132
Heterostructure Epitaxy and Devices — HEAD’97
Heterostructure Epitaxy and Devices — HEAD’97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a1f93b47bbe6d56d2103b42dd2038b2
https://doi.org/10.1007/978-94-011-5012-5_9
https://doi.org/10.1007/978-94-011-5012-5_9
Publikováno v:
Crystal Research & Technology; Oct2009, Vol. 44 Issue 10, p1089-1094, 6p