Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Z Othaman"'
Publikováno v:
Jurnal Pendidikan Fisika Indonesia, Vol 8, Iss 2 (2012)
Film tipis CdTe dengan doping tembaga (Cu) berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO) dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2%) terhadap struktur
Externí odkaz:
https://doaj.org/article/4d9e4600fd014a718f31d5e92061d08a
Autor:
B. Astuti, N. I. Rusli, A. M. Hashim, Z. Othaman, N. Nafarizal, N. K. Ali, N. M. Safri, Abdul Manaf Hashim, Vijay K. Arora
Publikováno v:
AIP Conference Proceedings.
Porous silicon (PS) is defined as a composition of a silicon skeleton permeated by a network of pores or in other word, PS is a network of silicon nanowires and nanoholes which are formed when the crystalline silicon wafers are etched electrochemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ac691aa517c1af6b2bd40d221541fe
https://doi.org/10.1063/1.3586967
https://doi.org/10.1063/1.3586967
Publikováno v:
Semiconductor Science and Technology. 8:1483-1486
The authors have performed detailed investigations of an asymmetrically doped GaAs/AlAs/GaAs tunnel diode in which a 2D accumulation layer forms at the emitter/barrier interface under forward bias. The systematic application of hydrostatic pressure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44fd6686b386a3546f684bf6e85569a4
https://doi.org/10.1088/0268-1242/8/7/047
https://doi.org/10.1088/0268-1242/8/7/047
Publikováno v:
AIP Conference Proceedings.
Single layer of In0.5Ga0.5As quantum dots (QDs) was grown using self‐assembled Stranski‐Krastanow on a thin InxGa1−xAs underlying layer and on a reference GaAs wafer by metal‐organic chemical vapour deposition (MOCVD). The effect of different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a48fd3aacc83a48e91761f27269f785
https://doi.org/10.1063/1.3469685
https://doi.org/10.1063/1.3469685
Autor:
Y. A. Manap, B. Ismail, M. N. M. Yusuf, W. N. W. Shamsuri, Y. Wahab, Z. Othaman, Mohamad Rusop, Rihanum Yahaya Subban, Norlida Kamarulzaman, Wong Tin Wui
Publikováno v:
AIP Conference Proceedings.
ZnO thin films were deposited onto corning glass substrates by rf magnetron sputtering system using ZnO targets. Films were deposited under rf power of 80 W at various deposition time. The distance between the target and substrate was held at 45 cm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb2fba04870b002a95ce6f79c84fdc4
https://doi.org/10.1063/1.3377880
https://doi.org/10.1063/1.3377880
Autor:
M. Rossmanith, Z. Othaman, K. H. Ploog, A. J. Peck, G. A. Saunders, K. von Klitzing, S. J. Bending
Publikováno v:
Journal of Applied Physics. 70:1548-1552
A study has been made of the effect of hydrostatic pressure on an AlAs/GaAs/AlAs resonant tunneling diode in which the electrodes have been deliberately asymmetrically doped. In reverse bias, current is injected into the structure from a highly doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1be53db0b5aba3e9464cb7636f92324
https://doi.org/10.1063/1.349571
https://doi.org/10.1063/1.349571
Autor:
D A Ladds, P J Ford, R.A.L. Sullivan, G. A. Saunders, Ll. Mañosa, S. J. Bending, Chang Fanggao, Darryl P Almond, Z. Othaman, S. Smith, B Chapman, Quentin A. Pankhurst
Publikováno v:
Solid State Communications. 78:413-417
Interest in the material Ca0.5Zn0.5Fe2O4 has been stimulated by the suggestion that it is superconducting up to 200K. We have examined this material using a variety of experimental techniques and have concluded that this is not the case. Instead, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e9afb1ae17a5bccaacf47c85111459a
https://doi.org/10.1016/0038-1098(91)90695-r
https://doi.org/10.1016/0038-1098(91)90695-r
Publikováno v:
Journal of Physics: Conference Series. 423:012047
Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e25f0d992706ceee992839bbec2eb8
https://doi.org/10.1088/1742-6596/423/1/012047
https://doi.org/10.1088/1742-6596/423/1/012047
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