Zobrazeno 1 - 10
of 256
pro vyhledávání: '"Zólyomi V"'
Autor:
Márkus, B. G., Gmitra, M., Dóra, B., Csősz, G., Fehér, T., Szirmai, P., Náfrádi, B., Zólyomi, V., Forró, L., Fabian, J., Simon, F.
Publikováno v:
Nature Communications volume 14, Article number: 2831 (2023)
Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated t
Externí odkaz:
http://arxiv.org/abs/2305.15433
Autor:
Magorrian, S. J., Enaldiev, V. V., Zólyomi, V., Ferreira, Fábio, Fal'ko, Vladimir I., Ruiz-Tijerina, David A.
Publikováno v:
Phys. Rev. B 104, 125440 (2021)
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moir\'e potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybr
Externí odkaz:
http://arxiv.org/abs/2106.06058
Autor:
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Grigorieva, I. V., Fal'ko, V. I.
Publikováno v:
Phys. Rev. B 104, 125432 (2021)
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrin
Externí odkaz:
http://arxiv.org/abs/2106.04719
Publikováno v:
Phys. Rev. B 103, 094118 (2021)
We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technological
Externí odkaz:
http://arxiv.org/abs/2101.11733
Publikováno v:
Phys. Rev. B 101, 205115 (2020)
We report diffusion quantum Monte Carlo (DMC) and many-body $GW$ calculations of the electronic band gaps of monolayer and bulk hexagonal boron nitride (hBN). We find the monolayer band gap to be indirect. $GW$ predicts much smaller quasiparticle gap
Externí odkaz:
http://arxiv.org/abs/2003.06608
Publikováno v:
Phys. Rev. Lett. 124, 206101 (2020)
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2
Externí odkaz:
http://arxiv.org/abs/1911.12804
Publikováno v:
Phys. Rev. B 96, 195428 (2017)
We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in bot
Externí odkaz:
http://arxiv.org/abs/1711.03402
Publikováno v:
Phys. Rev. B 94, 245431 (2016)
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parame
Externí odkaz:
http://arxiv.org/abs/1611.00262
Autor:
Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zolyomi, V., Morozov, S. V., Kumar, R. Krishna, Gorbachev, R. V., Kudrynskyi, Z. R., Pezzini, S., Kovalyuk, Z. D., Zeitler, U., Novoselov, K. S., Patane, A., Eaves, L., Grigorieva, I. V., Fal'ko, V. I., Geim, A. K., Cao, Y.
Publikováno v:
Nature Nanotechnology 12, 223-227 (2016)
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement a
Externí odkaz:
http://arxiv.org/abs/1608.08950
Autor:
Szirmai, P., Márkus, B. G., Dóra, B., Fábián, G., Koltai, J., Zólyomi, V., Kürti, J., Náfrádi, B., Forró, L., Pichler, T., Simon, F.
Publikováno v:
Phys. Rev. B 96, 075133 (2017)
Albeit difficult to access experimentally, the density of states (DOS) is a key parameter in solid state systems which governs several important phenomena including transport, magnetism, thermal, and thermoelectric properties. We study DOS in an ense
Externí odkaz:
http://arxiv.org/abs/1608.04938