Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements

Autor: J. Szivos, L. Balogh, I. Rajta, G. U. L. Nagy, Z. T. Gaal, V. Samu, K. Takefumi, Z. Zolnai

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 10, Pp 761-768 (2022)

High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring

Externí odkaz: https://doaj.org/article/6d3f508396884b1bb121f734104a64c1

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MeV Energy $\hbox{N}^{+}$-Implanted Planar Optical Waveguides in Er-Doped Tungsten-Tellurite Glass Operating at 1.55 $\mu\hbox{m}$

Autor: I. Banyasz, S. Berneschi, M. Bettinelli, M. Brenci, M. Fried, N. Q. Khanh, T. Lohner, G. Nunzi Conti, S. Pelli, P. Petrik, G. C. Righini, A. Speghini, A. Watterich, Z. Zolnai

Publikováno v: IEEE Photonics Journal, Vol 4, Iss 3, Pp 721-727 (2012)

We report on the fabrication and characterization of planar waveguides in an Er-doped tungsten-tellurite glass by implantation of 3.5 MeV N+ ions. Implantations were carried out in a wide fluence range of 1·1016 ÷8 ·1016 ions/cm2. Waveguides were

Externí odkaz: https://doaj.org/article/ebd739019212413c8c7a2680ecb3aa5e

n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion

Autor: Attila Németh, Roberto Fornari, Matteo Bosi, Alessio Lamperti, Alessio Bosio, Ildikó Cora, Antonella Parisini, Carmine Borelli, Zsolt Fogarassy, Z. Zolnai, Salvatore Vantaggio, Béla Pécz, Laura Fornasini

Publikováno v: Acta materialia 210 (2021): 116848-1–116848-9. doi:10.1016/j.actamat.2021.116848
info:cnr-pdr/source/autori:Bosio A.; Parisini A.; Lamperti A.; Borelli C.; Fornasini L.; Bosi M.; Cora I.; Fogarassy Z.; Pecs B.; Zolnai Z.; Nemeth A.; Vantaggio S.; Fornari R./titolo:n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion/doi:10.1016%2Fj.actamat.2021.116848/rivista:Acta materialia/anno:2021/pagina_da:116848-1/pagina_a:116848-9/intervallo_pagine:116848-1–116848-9/volume:210

The good control of the n-type doping is a key issue for the fabrication of efficient devices based on e-Ga2O3 epilayers. In this work we studied the possibility of doping the e-Ga2O3 thin films, epitaxially grown on c-oriented sapphire by metal-orga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42aba7cd5e5e1596968e8936f9d70d95
https://www.sciencedirect.com/science/article/abs/pii/S1359645421002287

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