Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Z, Dziuba"'
Publikováno v:
Applied Physics A: Materials Science & Processing. 77:937-945
The magnetic field dependence of conductivity tensor components, magnetoresistance, and the Hall coefficient have been analyzed in an n-type Si-doped GaAs epilayer at temperatures from 11 to 295 K. Carriers from the conduction band and the impurity b
Publikováno v:
Acta Alimentaria. 32:169-179
The aim of this work was to study the chymosin-catalysed hydrolysis of reconstituted casein systems containing a s1 -casein, a s2 -casein, s-casein and ?-casein or s-casein modified via chemical glucosylation and/or enzymatic dephosphorylation. The s
Publikováno v:
Communications in agricultural and applied biological sciences. 68(2 Pt)
Beta-lactoglobulin (beta-Lg) preparations obtained from whey retentate through (a) salting out at high NaCl concentration in a strongly acid medium (30% NaCl, pH 2.0), (b) alfa-lactalbumin (alfa-La) removal at mild conditions (55 degrees C/30 min, pH
Autor:
Sarah L. Keller, Bernd Keller, Adam Babiński, Steven P. DenBaars, Peter Kozodoy, Z. Dziuba, M. Górska, Jarek Antoszewski, Umesh K. Mishra
Publikováno v:
Scopus-Elsevier
A new method for magneto-transport characterisation of semiconductor heterostructures is presented. The classical model of mixed conduction, modified by corrections resulting from quantum effects, has been used in the analysis of the conductivity-ten
Publikováno v:
Acta Physica Polonica A. 97:331-336
Thin, undoped heterostructures are very interesting from the point of view of their transport properties. In such samples the contribution of the conduction band or valence band carriers to the conductivity can be small and effects associated with th
Publikováno v:
Journal of Applied Physics. 85:6619-6624
The electrical conduction in an n-type In0.53Ga0.47As/InP sample grown by molecular beam epitaxy has been analyzed in the magnetic field up to 1.5 T, at temperatures from 15 to 295 K. The electrical conduction has been ascribed to the impurity band (
Publikováno v:
Journal of Applied Physics. 82:6102-6106
A new algorithm of the analysis of the electrical conduction in the layers forming a semiconductor structure has been described. In the algorithm, in contrast to earlier approaches, the mobility spectrum technique has been applied to the sheet conduc
Autor:
Z. Dziuba
Publikováno v:
Physica Status Solidi (a). 153:445-457
The mobility spectrum technique is especially useful in the analysis of the electrical conduction in multilayer epitaxial semiconductor structures. If the electric charge can flow between layers close to the side of the sample, the electric conductio
Publikováno v:
Acta Physica Polonica A. 87:225-228
Publikováno v:
Acta Physica Polonica A. 86:567-574
X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers ohs the CdTe and GaAs substrates. ZnTe epitaxial 1ayers on CdTe were grown by M