Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yvonne Schiele"'
Autor:
Christophe Ballif, S. Seren, Elisa Tonelli, Pierre Saint-Cast, Renate Horbelt, Bernd Weber, Stephen Devenport, Stefan W. Glunz, Jan Ebser, Wolfgang Oswald, Verena Mertens, Chiara Busto, F Ferrazza, Tabitha Ballmann, Christian Schmiga, Barbara Terheiden, Maximilian Scherff, Michael Rauer, Giso Hahn, D.J. Morrison, Federico Grasso, Jonas Geissbuehler, Jörg Müller, Yvonne Schiele, Max Koentopp, Zachary C. Holman, Antoine Descoeudres, Danilo Antonelli, Silvia Martin de Nicolas, Stefaan De Wolf
Publikováno v:
physica status solidi (a). 212:13-24
Reducing wafer thickness while increasing power conversion efficiency is the most effective way to reduce cost per Watt of a silicon photovoltaic module. Within the European project 20 percent efficiency on less than 100-mu m-thick, industrially feas
Publikováno v:
Energy Procedia. 55:295-301
In order to minimize electrical losses in the phosphorous emitter being one of the dominant factors limiting the performance of standard screen-printed p-type c-Si solar cells, selective emitter structures have been introduced to advanced standard p-
Autor:
Barbara Terheiden, Hans-Werner Becker, Giso Hahn, Yvonne Schiele, Detlef Rogalla, Sebastian Joos
Publikováno v:
Energy Procedia. 55:786-790
The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance r
Publikováno v:
Energy Procedia
Reducing the thickness of crystalline Si wafers processed to solar cells returns two significant benefits. Firstly, processing cost is reduced by saving cost- and energy-intensive Si material. Secondly, the required diffusion length of minority carri
Local rear contacts for silicon passivated emitter and rear contact solar cells can be established by point-wise treating an Al layer with laser radiation and thereby establishing an electrical contact between Al and Si bulk through the dielectric pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73b7b48f5044c1ad88b524e8567b7241
Autor:
Jan Ebser, Alexander Frey, Josh Engelhardt, Barbara Terheiden, Yvonne Schiele, Giso Hahn, Renate Horbelt, Nils Brinkmann
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn en
For the first time we present a free energy loss analysis (FELA) of heterojunction silicon solar cells (HSSC) to study the influence of the intrinsic buffer layer thickness (tbuffer) on the solar cell efficiency (η). The main advantage of the FELA i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f463323b7379377253d5f66ded14c8fe
Publikováno v:
Energy Procedia. :459-466
Highly purified n-type Upgraded Metallurgical Grade (UMG) silicon carries a large potential for high efficiency low cost solar cells. In this study, the industrially producible “PhosTop” solar cell concept is employed to manufacture large-area n-