Zobrazeno 1 - 7 of 7 pro vyhledávání: '"Yvo Barnscheidt"'
1
Akademický článek
Tungsten Nanoparticles Accelerate Polysulfides Conversion: A Viable Route toward Stable Room‐Temperature Sodium–Sulfur Batteries
Autor: Yuping Liu, Shuangying Ma, Marina Rosebrock, Pascal Rusch, Yvo Barnscheidt, Chuanqiang Wu, Pengfei Nan, Frederik Bettels, Zhihua Lin, Taoran Li, Binghui Ge, Nadja C. Bigall, Herbert Pfnür, Fei Ding, Chaofeng Zhang, Lin Zhang
Publikováno v: Advanced Science, Vol 9, Iss 11, Pp n/a-n/a (2022)
Abstract Room‐temperature sodium–sulfur (RT Na–S) batteries are arousing great interest in recent years. Their practical applications, however, are hindered by several intrinsic problems, such as the sluggish kinetic, shuttle effect, and the in
Externí odkaz: https://doaj.org/article/36d7ca4b86b54591b8bbb7bf1fcf55b2
Zobrazit plný text záznamu
2
Akademický článek
A Biomass‐Based Integral Approach Enables Li‐S Full Pouch Cells with Exceptional Power Density and Energy Density
Autor: Yuping Liu, Yvo Barnscheidt, Manhua Peng, Frederik Bettels, Taoran Li, Tao He, Fei Ding, Lin Zhang
Publikováno v: Advanced Science, Vol 8, Iss 14, Pp n/a-n/a (2021)
Abstract Lithium‐sulfur (Li‐S) batteries, as part of the post‐lithium‐ion batteries (post‐LIBs), are expected to deliver significantly higher energy densities. Their power densities, however, are today considerably worse than that of the LI
Externí odkaz: https://doaj.org/article/798bcac0bad24a19971e49ec798e6302
Zobrazit plný text záznamu
4
Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system
Autor: Jan Schmidt, Yvo Barnscheidt, H. Jörg Osten
Publikováno v: Journal of Applied Crystallography
Journal of Applied Crystallography 53 (2020)
Grazing-incidence X-ray diffraction analysis of the coincidence site lattice formed by interfacial misfit dislocations in Ge/Si(001) heteroepitaxy is reported for a wide variety of Ge layer thicknesses ranging from 10 to 580 nm.
The Ge/Si(001) s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e316f5dd2c935c528e40e616a41a6465
Zobrazit plný text záznamu
5
Paving the way to dislocation reduction in Ge/Si(001) heteroepitaxy using C-based strained layer superlattices
Autor: H. Jörg Osten, M. Franck, Yvo Barnscheidt
Publikováno v: Journal of Applied Physics. 128:095703
Epitaxial Ge films were grown on Si(001) substrates by molecular beam epitaxy. During epitaxial growth, two carbon interlayers were deposited at varying substrate temperatures ( 140 − 620 ° C) and with varying C quantity ( 0 − 1.5 monolayers). T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5f6a417c0f624e9307e3f921360ed3f
https://doi.org/10.1063/5.0004352
Zobrazit plný text záznamu
6
Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells
Autor: Yevgeniya Larionova, Jan-Dirk Kähler, Sina Reiter, D. Tetzlaff, Yvo Barnscheidt, Tobias Wietler, Uwe Hohne, Jan Krügener, Robby Peibst, Mircea Turcu
Publikováno v: 2016 21st International Conference on Ion Implantation Technology (IIT).
Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resist
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c8a8e7a4443aa362c0719402f922b56c
https://doi.org/10.1109/iit.2016.7882868
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje