Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Yves Rody"'
Autor:
Emek Yesilada, Mazen Saied, Franck Foussadier, Yves Rody, Christian Gardin, Jerome Belledent, Jonathan Planchot, Frederic Robert, Amandine Borjon, Christophe Couderc, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
Microelectronic Engineering. 84:770-773
With the continuous reduction of layout dimension, critical dimension control becomes more and more tricky. Being one contribution of critical dimension variation, etch bias correction needs to get more accurate. The correction by rule-based optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae8fe470b22993341ac933e3cf1ff67c
https://doi.org/10.1016/j.mee.2007.01.085
https://doi.org/10.1016/j.mee.2007.01.085
Autor:
Emek Yesilada, G. Kerrien, Catherine Martinelli, Florent Vautrin, Laurent Le Cam, Christophe Couderc, Jerome Belledent, Frank Sundermann, Patrick Schiavone, Franck Foussadier, Yorick Trouiller, Jonathan Planchot, Jean-Christophe Urbani, Patrick Montgomery, Mazen Saied, Frederic Robert, Amandine Borjon, Bill Willkinson, Yves Rody, Christian Gardin
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
International audience; Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Inde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e3544f3d1c7ef4c7bf1d47f9943f4ca
https://doi.org/10.1016/j.mee.2007.01.016
https://doi.org/10.1016/j.mee.2007.01.016
Autor:
Patrick Schiavone, Pierre-Jerome Goirand, S. Manakli, Yorick Trouiller, P. Spinelli, Yves Rody, O. Le-Borgne, J.-P. Chollet
Publikováno v:
Microelectronic Engineering. :123-132
In optical lithography, the use of multiple focal planes with different energy and focus improves the photolithography performances like the Depth of Focus (DOF) and the Energy Latitude (EL). We have chosen to use a symmetrical double exposure (symme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a089ab84a1530cd27e73b845601866
https://doi.org/10.1016/s0167-9317(02)00521-x
https://doi.org/10.1016/s0167-9317(02)00521-x
Autor:
Jonathan Planchot, Amandine Borjon, Vincent Farys, Yorick Trouiller, Emek Yesilada, Christophe Couderc, Frederic Robert, Nicolo Morgana, Bill Wilkinson, Jean Christophe Urbani, Yves Rody, J. L. Di-Maria, Jerome Belledent, Christian Gardin, Frank Sundermann, Franck Foussadier, G. Kerrien, Catherine Martinelli, Isabelle Schanen, Florent Vautrin, Laurent LeCam, Mazen Saied
Publikováno v:
SPIE Proceedings.
The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b32f3aa447c96f40cbe921d420a2bf8
https://doi.org/10.1117/12.752613
https://doi.org/10.1117/12.752613
Autor:
Jonathan Planchot, Catherine Martinelli, Patrick Montgomery, Christophe Couderc, Emek Yesilada, Frederic Robert, Laurent LeCam, G. Kerrien, J. L. Di-Maria, Nicolo Morgana, Bill Wilkinson, Amandine Borjon, Yorick Trouiller, Jean-Christophe Urbani, Jerome Belledent, Franck Foussadier, Florent Vautrin, Mazen Saied, Yves Rody, Christian Gardin, Frank Sundermann, Jean-Damien Chapon, Vincent Farys
Publikováno v:
SPIE Proceedings.
Patterning isolated trenches for bright field layers such as the active layer has always been difficult for lithographers. This patterning is even more challenging for advanced technologies such as the 45nm node where most of the process optimization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71cc7f64b7fe94a9a02e09c87c79f7e
https://doi.org/10.1117/12.728960
https://doi.org/10.1117/12.728960
Autor:
Scott Warrick, Will Conley, Mazen Saied, Yves Rody, Christian Gardin, Jonathan Planchot, Christophe Couderc, Patrick Montgomery, Pierre-Jerome Goirand, Catherine Martinelli, Amandine Borjon, Frank Sundermann, Bill Wilkinson, Yorick Trouiller, Jean-Christophe Urbani, Frederic Robert, Laurent Le Cam, Florent Vautrin, G. Kerrien, Jerome Belledent, Emic Yesilada, Vincent Farys
Publikováno v:
SPIE Proceedings.
Resolution Enhancement Techniques (RET) are inherently design dependent technologies. To be successful the RET strategy needs to be adapted to the type of circuit desired. For SOC (system on chip), the three main patterning constraints come from: -St
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32fba57c3e8540d10beaa1e15e963b6
https://doi.org/10.1117/12.714116
https://doi.org/10.1117/12.714116
Autor:
Yves Rody, Gordon Russell, Andrew J. Moore, Timothy Lin, Amandine Borjon, Catherine Martinelli, Frederic Robert
Publikováno v:
SPIE Proceedings.
The use of sub-resolution assist features (SRAFs) is a necessary and effective technique to mitigate the proximity effects resulting from low-k1 imaging with aggressive illumination schemes. This paper investigates the application of one implementati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6221fffa482ca087912d738c090dbd3a
https://doi.org/10.1117/12.712369
https://doi.org/10.1117/12.712369
Autor:
Mazen Saied, Amandine Borjon, Jerome Belledent, Florent Vautrin, Laurent LeCam, Christophe Couderc, Franck Foussadier, Catherine Martinelli, Bill Wilkinson, Emek Yesilada, Yves Rody, Christian Gardin, Jean-Luc Di Maria, Frederic Robert, Nicolo Morgana, Vincent Farys, Jonathan Planchot, Yorick Trouiller, Patrick Montgomery, Frank Sundermann, Jean-Christophe Urbani, G. Kerrien
Publikováno v:
23rd European Mask and Lithography Conference.
Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::856affff9df2abfcafe621e436d4142e
https://doi.org/10.1117/12.736927
https://doi.org/10.1117/12.736927
Autor:
Kevin Lucas, Amandine Borjon, Mazen Saied, Yves Rody, Christian Gardin, Christophe Couderc, Isabelle Schanen, Jerome Belledent, Laurent LeCam, Emek Yesilada, Franck Foussadier, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
SPIE Proceedings.
The quality of model-based OPC correction depends strongly on how the model is calibrated in order to generate a resist image as close to the desired shapes as possible. As the k1 process factor decreases and design complexity increases, the correcti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70c634bcf40a1f1be3dbc19039147714
https://doi.org/10.1117/12.686666
https://doi.org/10.1117/12.686666
Autor:
Jerome Belledent, Patrick Schiavone, F. Foussadier, Christophe Couderc, Kevin Lucas, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani, Amandine Borjon, Yves Rody, Christian Gardin
Publikováno v:
SPIE Proceedings vol. 6154, Optical Microlithography XIX
Ensuring robust patterning after OPC is becoming more and more difficult due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6d4d3068cbacade6854d57fed44c073
https://doi.org/10.1117/12.657056
https://doi.org/10.1117/12.657056