Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yves Ngu"'
Autor:
Alvin Joseph, Vibhor Jain, John Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4af9998a4aba9f49e280926b2549787b
https://doi.org/10.1109/bcicts53451.2022.10051743
https://doi.org/10.1109/bcicts53451.2022.10051743
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:331-336
Ti, Co, Pt, and Ni salicide processes optimized for a range of CMOS technology nodes down to 90nm were fabricated using 0.35 $\mu {\mathrm{ m}}$ SiGe BiCMOS. On-wafer circuitry was used to program discrete eFuse elements to compare their pre and post
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca91fed5bd30186247ead73ee9f9364
https://doi.org/10.1109/tsm.2020.2991373
https://doi.org/10.1109/tsm.2020.2991373
Autor:
Ajay Raman, Vibhor Jain, Elanchezhian Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Yves Ngu, Alvin Joseph
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92e4c6a01e434224f021eb25b214e54
https://doi.org/10.1109/bcicts50416.2021.9682457
https://doi.org/10.1109/bcicts50416.2021.9682457
Publikováno v:
BCICTS
The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d002dd0fa736f67a68738e3500606e
https://doi.org/10.1109/bcicts45179.2019.8972747
https://doi.org/10.1109/bcicts45179.2019.8972747
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
0.35um SiGe BiCMOS wafers were fabricated using Ti, Co, Pt, and Ni salicide processes optimized for a range of CMOS technology nodes down to 90nm. On-wafer circuitry was used to program discrete eFuse elements to compare their pre and post programmed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855bda742e1489fa05b220ea67aac6b6
https://doi.org/10.1109/asmc.2019.8791749
https://doi.org/10.1109/asmc.2019.8791749
Autor:
Michael A. Mastro, R. L. Henry, Yves Ngu, D Sander, Ronald T. Holm, Marty Peckerar, Charles R. Eddy, A Tuchman, Jennifer K. Hite
Publikováno v:
IEEE Transactions on Electron Devices. 57:1224-1229
An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial AlxGa1-xN-layer stacking approach is used to establish sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d57f200d459e7c5922ac9557915e498
https://doi.org/10.1109/ted.2010.2045706
https://doi.org/10.1109/ted.2010.2045706
Autor:
G. Metze, Yves Ngu, Daniel A. Lowy, Neil Goldsman, Leonard M. Tender, Martin Peckerar, Michael Kbheis
Publikováno v:
ECS Transactions. 3:77-85
Initial studies on the fabrication of a new double-layer capacitor based on hydrated ruthenium oxide (RuO2.xH2O) are presented. The electrochemical capacitor cell is based on three designs approaches: active surface enhancement via corrugations, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dace7f53ff020c0969d1b8247734c7c1
https://doi.org/10.1149/1.2795108
https://doi.org/10.1149/1.2795108
Autor:
Michael A. Mastro, Orest J. Glembocki, Sachidananda Babu, Mark E. Twigg, Yves Ngu, Charles R. Eddy, James C. Culbertson, Ronald T. Holm, Feng Yan, J. Anthony Powell, Joshua D. Caldwell, Andrew J. Trunek, R.L. Henry, Martin Peckerar, Nabil Bassim, P. G. Neudeck
Publikováno v:
ECS Transactions. 3:117-125
Two approaches to achieving reduced-defect active regions in III-N devices are discussed - confined epitaxy and heteroepitaxy on step-free SiC surfaces. In confined epitaxy, sapphire substrates (either GaN coated or not) are patterned with a dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491307e7f0103fb43713877863fb9af2
https://doi.org/10.1149/1.2357202
https://doi.org/10.1149/1.2357202
Publikováno v:
2007 International Semiconductor Device Research Symposium.
A high capacitance battery cell that offers a capacitive storage system along with electrochemical power generation was fabricated. The purpose of this unit is to provide an electrochemical capacitor and power generation cell structure that enables e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0697732dd5c8a54563ed8c17d36a3f1
https://doi.org/10.1109/isdrs.2007.4422288
https://doi.org/10.1109/isdrs.2007.4422288
Autor:
Martin Peckerar, Robert Benjamin Proctor, Z. Dilli, Benjamin J. Krupsaw, Yves Ngu, Mahsa Dornajafi, Daniel A. Lowy, Neil Goldsman
Publikováno v:
Energy & Environmental Science. 4:1807
Ultrathin galvanic cells, which can comply with a variety of form factors and electronic system packages, are of technological importance, as they show promise for flexible electronic systems. Here we describe a high energy density flexible galvanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52b6ed65c120462de720908938772f6
https://doi.org/10.1039/c1ee01075a
https://doi.org/10.1039/c1ee01075a