Zobrazeno 1 - 10
of 179
pro vyhledávání: '"Yves Monteil"'
Publikováno v:
Journal of Alloys and Compounds
Journal of Alloys and Compounds, Elsevier, 2010, 506, pp.10
Journal of Alloys and Compounds, Elsevier, 2010, 506, pp.10
Structural and optical studies of B x Ga 1− x As epilayers, grown by metal organic chemical vapor deposition (MOCVD), at different growth temperatures (580 °C and 500 °C), have been achieved by high-resolution X-ray diffraction (HRXRD) and photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbea7004bcf34eeff93553b754e189b7
https://doi.org/10.1016/j.jallcom.2010.06.169
https://doi.org/10.1016/j.jallcom.2010.06.169
Publikováno v:
Journal of Alloys and Compounds. 491:45-48
Structural and optical studies of In y Ga 1− y As/GaAs and B x In y Ga 1− x − y As/GaAs quantum wells, grown by Metal Organic Chemical Vapor Deposition (MOCVD), with the same indium composition, have been achieved by High-resolution X-ray Diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e4fb61c454804852c1f9fa6d4f5986
https://doi.org/10.1016/j.jallcom.2009.10.244
https://doi.org/10.1016/j.jallcom.2009.10.244
Publikováno v:
Journal of Alloys and Compounds. 487:206-213
The density functional theory calculations of structural phase transition, elastic constants and electronic structure of the CuAlX 2 (X = S, Se, Te) have been reported using the full potential linear muffin-tin orbital (FP-LMTO). In this approach, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0462952bafa449e319a1daf6803b6085
https://doi.org/10.1016/j.jallcom.2009.08.141
https://doi.org/10.1016/j.jallcom.2009.08.141
Autor:
M. Ghaffour, A. Abdellaoui, Z. Lounis, K. Hamaida, A. Ouerdane, M. Bouslama, Yves Monteil, N. Berrouachedi, C. Jardin
Publikováno v:
Applied Surface Science. 256:21-26
In this study, the EELS results revealed the great sensitivity of InP compound submitted to Ar + or N + ions at low energy. The preliminary treatment of InP by the Ar + ions was useful as part of the cleaning process of the surface. Further argon ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fd2689d44fae478be1ebc0d6caaa217
https://doi.org/10.1016/j.apsusc.2009.07.005
https://doi.org/10.1016/j.apsusc.2009.07.005
Publikováno v:
Thin Solid Films. 516:8424-8430
BGaAs epitaxial layers were grown by metalorganic vapour phase epitaxy (MOVPE) on (100) GaAs vicinal substrates using diborane, triethylgallium and arsine as precursors. For growth temperatures of 580 and 610 °C, we studied the boron incorporation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54bf72e85b8f0c623b2af12288b10ba2
https://doi.org/10.1016/j.tsf.2008.04.053
https://doi.org/10.1016/j.tsf.2008.04.053
Autor:
M. Bouslama, N. Berrouachedi, Yves Monteil, A. Ouerdane, Z. Lounis, M. Ghaffour, A. Abdellaoui, A. Ouhaibi, K. Hamaida
Publikováno v:
Applied Surface Science. 254:7394-7400
The goal of this research is to highlight the effectiveness of associating the spectroscopic methods EELS and EPES in the study of thin film grown on substrates. We use the great sensitivity of the Electron Energy Loss Spectroscopy (EELS) and the Ela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4855a5e833fd6c5306c72285fb454327
https://doi.org/10.1016/j.apsusc.2008.05.345
https://doi.org/10.1016/j.apsusc.2008.05.345
Autor:
K. Hamaida, Z. Lounis, M. Ghaffour, A. Ouerdane, M. Bouslama, A. Abdellaoui, N. Berrouachedi, Yves Monteil
Publikováno v:
Applied Surface Science. 254:4024-4028
The interaction of ions with matter plays an important role in the treatment of material surfaces. In this paper we study the effect of argon ion bombardment on the InSb surface in comparison with the InP one. The Ar+ ions, accelerated at low energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb170c104c6eba5c43592ab85fde36aa
https://doi.org/10.1016/j.apsusc.2007.12.038
https://doi.org/10.1016/j.apsusc.2007.12.038
Autor:
Gabriel Ferro, Didier Chaussende, Bilal Nsouli, Maher Soueidan, Olivier Kim-Hak, Patrick Chaudouët, Yves Monteil
Publikováno v:
Materials Science Forum. :187-190
We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc0d9a9dc0e0478ad4883b105ab72a2
https://doi.org/10.4028/www.scientific.net/msf.556-557.187
https://doi.org/10.4028/www.scientific.net/msf.556-557.187
Publikováno v:
Materials Science Forum. :395-398
We applied picosecond dynamic grating technique for studies of carrier dynamics in ntype DPB(double positioning boundary)-free 3C-SiC (111) epilayer grown by VLS (vapour-liquidsolid) mechanism on 6H-SiC (0001). The measurements of bipolar diffusion c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bd59461fb0928d94f4c4cf57364624e
https://doi.org/10.4028/www.scientific.net/msf.556-557.395
https://doi.org/10.4028/www.scientific.net/msf.556-557.395
Autor:
Gabriel Ferro, Nada Habka, K. Zahraman, Bilal Nsouli, Maher Soueidan, Yves Monteil, Ghassan Younes, Jean-Marie Bluet, Veronique Soulière
Publikováno v:
Materials Science Forum. :65-68
Vapor-Liquid-Solid was used for growing boron doped homoepitaxial SiC layers on 4HSiC( 0001) 8°off substrates. Si-based melts were fed by propane (5 sccm) in the temperature range 1450-1500°C. Two main approaches were studied to incorporate boron d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be1019df21043f9e063e54a6719c63a2
https://doi.org/10.4028/www.scientific.net/msf.556-557.65
https://doi.org/10.4028/www.scientific.net/msf.556-557.65