Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Yves Mols"'
Autor:
Yves Mols, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais, Nadine Collaert, Robert Langer, Bernardette Kunert
Publikováno v:
Materials, Vol 14, Iss 19, p 5682 (2021)
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF app
Externí odkaz:
https://doaj.org/article/5168191abba442179b4c35c49a36ad89
Autor:
Marina Baryshnikova, Yves Mols, Yoshiyuki Ishii, Reynald Alcotte, Han Han, Thomas Hantschel, Olivier Richard, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout, Robert Langer, Bernardette Kunert
Publikováno v:
Crystals, Vol 10, Iss 4, p 330 (2020)
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and het
Externí odkaz:
https://doaj.org/article/c5bd24532e2f4edf8f579325c1c35413
Autor:
Bernardette Kunert, Yves Mols, Reynald Alcotte, Peter Swekis, Sachin Yadav, Abhitosh Vais, Annie Kumar, Guillaume Boccardi, Robert Langer, Bertrand Parvais, Nadine Collaert
Publikováno v:
ECS Transactions. 111:105-116
The power amplifier (PA) in an RF front-end module operating above 100 GHz required for 6G wireless networks is the most power-hungry device circuit component. In that respect, InP-based heterojunction bipolar transistors (HBT) clearly outperform oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39d1100d8d34b4a7c372eaa245e4727
https://doi.org/10.1149/11101.0105ecst
https://doi.org/10.1149/11101.0105ecst
Autor:
Niamh Waldron, Bernardette Kunert, Nadine Collaert, Yves Mols, Robert Langer, Reynald Alcotte, Marina Baryshnikova
Publikováno v:
Crystal Growth & Design. 21:1657-1665
Nano-ridge engineering (NRE) is a novel heteroepitaxial integration approach for III–V devices on Si substrates. It starts with selective area growth in narrow trenches for misfit defect trapping. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d418fa2d71e73dcff845cba47cbc13
https://doi.org/10.1021/acs.cgd.0c01486
https://doi.org/10.1021/acs.cgd.0c01486
Autor:
Davide Colucci, Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb, Yannick De Koninck, Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, Robert Langer, Dries Van Thourhout, Bernardette Kunert
Publikováno v:
OPTICS EXPRESS
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63039006e622fa7261a2ab977b1991de
https://pubmed.ncbi.nlm.nih.gov/35472961
https://pubmed.ncbi.nlm.nih.gov/35472961
Autor:
Sachin Yadav, Liesbeth Witters, Yves Mols, Robert Langer, A. Vais, Guillaume Boccardi, Bertrand Parvais, Bernardette Kunert, Nadine Collaert, Reynald Alcotte, Marina Baryshnikova, Komal Vondkar, Niamh Waldron
Publikováno v:
Materials, Vol 14, Iss 5682, p 5682 (2021)
Materials
Volume 14
Issue 19
Materials
Volume 14
Issue 19
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2850c5be91ae96093ade31daf89e29c1
https://www.mdpi.com/1996-1944/14/19/5682
https://www.mdpi.com/1996-1944/14/19/5682
Autor:
Marina Baryshnikova, Yves Mols, Davide Colucci, Dries Van Thourhout, Bernardette Kunert, Yuting Shi, Joris Van Campenhout, Muhammad Muneeb, Yannick De Koninck, Marianna Pantouvaki
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
The integration of III-V compound materials on Silicon is of paramount importance for the implementation of a complete Silicon Photonics platform where both active components, such as III-V laser diodes and amplifiers, and passive components are pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a5da280624f74c49d937474aa10ec3
https://doi.org/10.1109/cleo/europe-eqec52157.2021.9541820
https://doi.org/10.1109/cleo/europe-eqec52157.2021.9541820
Autor:
Yves Mols, Clement Merckling, A. Vais, Dan Mocuta, Siva Ramesh, Hao Yu, Nadine Collaert, Kristin De Meyer, Marc Schaekers, Naoto Horiguchi, Tsvetan Ivanov, Lin-Lin Wang, Jian Zhang, Yu-Long Jiang
Publikováno v:
IEEE Electron Device Letters. 40:1800-1803
We compare the contact characteristics for Mo, Pd, and Ti on n-InGaAs layer with a range of active donor concentration from $1.6 \times 10^{18}$ cm−3 to $4.8 \times 10^{19}$ cm−3. The Fermi level pinning of 0.18 eV lower than the bottom of n-InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d63880b9dac2b584aa0e1ef62530474b
https://doi.org/10.1109/led.2019.2944245
https://doi.org/10.1109/led.2019.2944245
Autor:
Cor Claeys, Robert Langer, Nadine Collaert, Eddy Simoen, C Merckling, Marc Heyns, Geert Eneman, Yves Mols, Bernardette Kunert, A. Alian, Po-Chun Hsu, Niamh Waldron
Publikováno v:
ECS Transactions. 92:21-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c6df08a957773201c36626fd8f8cbe
https://doi.org/10.1149/09204.0021ecst
https://doi.org/10.1149/09204.0021ecst
Publikováno v:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Herein, the carrier lifetime in approximately 5x10^16 cm^(-3) n-doped In(x)Ga(1-x)As layers is studied by diode current–voltage analysis and by time-resolved photoluminescence. Two sets of hetero-epitaxial layers are grown on semi-insulating InP or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4eadf9b2de71c0898660e8c3fc4915fb
https://doi.org/10.1002/pssa.202200127
https://doi.org/10.1002/pssa.202200127