Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yves B. Trudeau"'
Publikováno v:
Microgravity - Science and Technology. 16:236-241
We are developing simulation tools to design aerosol experiments in a space environment. The simulations will be used to assess trade-offs among the level of gravity, active experimental volume, particle density and primary particle size. In our prev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64ca87da6ed93d19c386e55511ae4b7
https://doi.org/10.1007/bf02945983
https://doi.org/10.1007/bf02945983
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 90:419-423
Ion implanted GaAs samples have been chemically etched to form a small angle beveled surface. First order Raman spectroscopy has been performed along the bevel of as-implanted samples bombarded with 2.3 MeV Be and 10.9 MeV Se ions. The phonon confine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39709d42c02351037e32d5c99b0f3f80
https://doi.org/10.1016/0168-583x(94)95585-9
https://doi.org/10.1016/0168-583x(94)95585-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :706-710
The structural and optical properties of SI GaAs crystals implanted with Se, Si and Be ions have been studied. The implanted fluences ranged from 1012 to 1015 cm−2 at energies of 2.3 MeV (Be), 7 MeV (Si) and 10.9 MeV (Se), producing buried damaged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e142d0a054be45a13900558ab49803
https://doi.org/10.1016/0168-583x(93)96214-w
https://doi.org/10.1016/0168-583x(93)96214-w
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :676-679
Silicon-on-insulator (SOI) structures, formed by implanting n-type 〈100〉 silicon substrates with 3 × 1017, 6 × 1017 and 8 × 1017 O2+ ions cm−2 at 6 MeV, have been characterized by channeling/Rutherford backscattering spectroscopy (RBS). An a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f3166d8bf0d18e7d03d7bcb5c6973bb
https://doi.org/10.1016/0168-583x(91)95301-s
https://doi.org/10.1016/0168-583x(91)95301-s
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :609-613
Semi-insulating {100} GaAs wafers have been implanted with 3 MeV 9 Be 2+ , 7 MeV 28 Si 2+ and 8 MeV 80 Se 2+ ions to total doses ranging from 10 14 to 10 16 ions/cm 2 and the resulting damage has been profiled by channeling/Rutherford backscattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8680972b02855474f38b4d86829b7db7
https://doi.org/10.1016/0168-583x(91)95287-n
https://doi.org/10.1016/0168-583x(91)95287-n