Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yuzo Fukuzaki"'
Autor:
Manabu Tomita, Tsuyoshi Suzuki, Kazuhisa Ogawa, Hidetoshi Oishi, Masaaki Bairo, Yuzo Fukuzaki, Hidetoshi Ohnuma, Shigetaka Mori
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 29:185-192
A novel monitoring test structure is proposed for plasma process-induced charging damage (PID) based on charge-based capacitance measurement (CBCM), referred to as PID–CBCM. By eliminating antenna capacitance interferences, a remarkably smaller gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240ea2785e4f0babc00d83806b23a704
https://doi.org/10.1109/tsm.2016.2567599
https://doi.org/10.1109/tsm.2016.2567599
Autor:
Ken Sawada, Tsuyoshi Suzuki, Manabu Tomita, Shigetaka Mori, Hidetoshi Oishi, Hidetoshi Ohnuma, Yuzo Fukuzaki, Kazuhisa Ogawa, Masaaki Bairo
Publikováno v:
2016 International Conference on Microelectronic Test Structures (ICMTS).
A highly effective and versatile test structure with a flexible pulse generating circuit is proposed. Several significant features of the key components are demonstrated, that is, the tunable ring oscillator, the start-stop pulse controller, the Char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7676de4007cacb1a6b329e8a52783676
https://doi.org/10.1109/icmts.2016.7476185
https://doi.org/10.1109/icmts.2016.7476185
Autor:
Yuzo Fukuzaki, Masaaki Bairo, Hidetoshi Oishi, Kazuhisa Ogawa, Shigetaka Mori, Tsuyoshi Suzuki, Hidetoshi Ohnuma, Manabu Tomita
Publikováno v:
2016 International Conference on Microelectronic Test Structures (ICMTS).
A Novel Ioff measurable MOSFET array has been developed. Body bias of peripheral circuit is controlled in order to eliminate the unwanted leakage current in peripheral circuit. SPICE simulation results indicate 10−14A or less of Ioff can be measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f17d13d0baeba8b2d48a531b4c026a62
https://doi.org/10.1109/icmts.2016.7476174
https://doi.org/10.1109/icmts.2016.7476174
Autor:
Carlo Cagli, Yuzo Fukuzaki
Publikováno v:
2016 International Conference on Microelectronic Test Structures (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341b43c35f4cdee06fc3c480af3ee827
https://doi.org/10.1109/icmts.2016.7476188
https://doi.org/10.1109/icmts.2016.7476188
Autor:
Yuzo Fukuzaki, Hidetoshi Ohnuma, Manabu Tomita, Hidetoshi Oishi, Shigetaka Mori, Kazuhisa Ogawa, Tsuyoshi Suzuki, Masaaki Bairo
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
We propose monitoring test structure and measurement technique for plasma process induced charging damage (PID) using charge-based capacitance measurement (CBCM). For evaluating the influence of PID on MOSFET effectively, remarkably small (several te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81f25933e2ad7f1102613a5f478ef66
https://doi.org/10.1109/icmts.2015.7106123
https://doi.org/10.1109/icmts.2015.7106123
Autor:
Hiroaki Ammo, Shigetaka Mori, Yuzo Fukuzaki, Verkest Diederik, Ken Sawada, Cherman Vladimir, Abdelkarim Mercha, Geert Van der Plas
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
CBCM measurements require known clock frequency. We proposed CBCM test structures with an internal start-stop self-pulsing circuit instead of external clock monitoring.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d354eb70d6cf6001f4a060dee4e2d4
https://doi.org/10.1109/icmts.2015.7106126
https://doi.org/10.1109/icmts.2015.7106126
Autor:
Vladimir Cherman, Tsuyoshi Suzuki, Julien Ryckaert, Eric Beyne, Shigetaka Mori, Ankur Anchlia, Hidetoshi Ohnuma, Hidetoshi Oishi, Diederik Verkest, Yuzo Fukuzaki, Geert Van der Plas, Kazuhisa Ogawa
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3153330697b9b438fac1304581f709db
https://doi.org/10.1109/icmts.2015.7106095
https://doi.org/10.1109/icmts.2015.7106095
Autor:
SungGeun Kim, Yuzo Fukuzaki, Charles Cheung, Mustafa Badaroglu, Mehdi Salmani, Kwok Ng, Gerhard Klimeck, Chorng-Ping Chang
Publikováno v:
ICCD
CMOS scaling enabled simultaneous system throughput scaling by concurrent delay, power, and area shrinks with thanks to Moore's law. System scaling is getting more difficult with the limitations in interconnect and bandwidth per power as well as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f744a400a8547b555e87393c32d95f
https://doi.org/10.1109/iccd.2014.6974674
https://doi.org/10.1109/iccd.2014.6974674
Autor:
M. Kanno, A. Shibuya, K. Tamura, H. Ansai, S. Mori, T. Gocho, Naoki Nagashima, Yuzo Fukuzaki, M. Matsumura, H. Tsuno
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
This paper proposes a practical methodology to extract overall variations of MOSFET characteristics on 65nm node and beyond. Firstly, we show how MOSFET variations are originated and categorized by these causes and unit regions. Secondly, we demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff125b90199b27ffa0c80574278f4bc
https://doi.org/10.1109/vlsit.2007.4339738
https://doi.org/10.1109/vlsit.2007.4339738
Autor:
M. Matsumura, H. Koike, Y. Hiura, M. Kanno, A. Honjo, K. Anzai, Yuzo Fukuzaki, H. Tsuno, A. Takeo, H. Ansai, Naoki Nagashima, S. Minami, W. Fu
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We report an advanced method of analyzing and modeling MOSFET characteristic fluctuations in CMOS circuits. We focused on gate space dependence, STI width dependence, and interaction between gate-STI distance and STI width in 65-nm node technology wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa74488f45daf757adc67e2f473483bb
https://doi.org/10.1109/vlsit.2007.4339693
https://doi.org/10.1109/vlsit.2007.4339693