Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yuya Urayama"'
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 23, p235705-1-235705-6, 6p, 1 Color Photograph, 1 Diagram, 6 Graphs
Publikováno v:
Applied Physics Express. 9:111005
We report novel GaN fully vertical p–n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm−3 in an n−-GaN drift layer. The GaN p–n diode exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47f603def600d63ca0672dc51510a49b
https://doi.org/10.7567/apex.9.111005
https://doi.org/10.7567/apex.9.111005
Publikováno v:
Journal of Applied Physics. 118:235705
The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51439c964fc6da63e969fba1cf240dec
http://id.nii.ac.jp/1476/00006348/
http://id.nii.ac.jp/1476/00006348/
Publikováno v:
Applied Physics Letters. 107(10):103506
The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::087d862a9c23e56ba9787da6f7f02d06
http://id.nii.ac.jp/1476/00006148/
http://id.nii.ac.jp/1476/00006148/
Publikováno v:
Applied Physics Express; Nov2016, Vol. 9 Issue 11, p1-1, 1p