Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yuya Oyanagi"'
Autor:
Atsushi Ogura, Yusuke Hashimoto, Yuya Oyanagi, Hideaki Machida, H. Wakabayashi, Masato Ishikawa, Yusuke Hibino, Sudo Hiroshi, Naomi Sawamoto, Kota Yamazaki
Publikováno v:
MRS Advances. 5:1643-1652
Molybdenum disulfide (MoS2) is expected to be applied for devices in various fields owing to its unique characteristics. Establishing a high-productivity manufacturing method which yields high quality films is an important and unresolved issue for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45acca2de260974a9191240ccddab68b
https://doi.org/10.1557/adv.2020.187
https://doi.org/10.1557/adv.2020.187
Autor:
Atsushi Ogura, Naomi Sawamoto, Yuya Oyanagi, Kentaro Matsuura, Hitoshi Wakabayashi, Seiya Ishihara, Yusuke Hibino, Masaya Hamada, Takuro Sakamoto
Publikováno v:
Vacuum and Surface Science. 62:611-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54aeccc0b2936f49afff995803fddfd2
https://doi.org/10.1380/vss.62.611
https://doi.org/10.1380/vss.62.611
Autor:
Naomi Sawamoto, Yusuke Hashimoto, Yusuke Hibino, Kota Yamazaki, Yuya Oyanagi, Atsushi Ogura, Hitoshi Wakabayashi
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
The research on 2D layered transition metal dichalcogenides (TMDs) is a topic of rapidly growing field owing to its attractive physical properties and variety in applications. In order to expand the application possibility, alloying is carried out re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5e30f3811df7900fec1cdacf71afee
https://doi.org/10.1109/edtm47692.2020.9118006
https://doi.org/10.1109/edtm47692.2020.9118006
Autor:
Yuya Oyanagi, Yusuke Hibino, Hitoshi Wakabayashi, Takumi Ohashi, Naomi Sawamoto, Kentarou Matsuura, Seiya Ishihara, Atsushi Ogura
Publikováno v:
ECS Transactions. 85:531-539
In this study, sputtering deposition has been used to fabricate molybdenum disulfide (MoS2). The problem with sputtering deposition of MoS2 is desorption of S atoms from the film when the substrate is brought to high temperature in order to obtain hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99a8c91668e25253a64120c0375979f
https://doi.org/10.1149/08513.0531ecst
https://doi.org/10.1149/08513.0531ecst
Autor:
Hitoshi Wakabayashi, Yuya Oyanagi, Kota Yamazaki, Naomi Sawamoto, Yusuke Hibino, Hideaki Machida, Masato Ishikawa, Seiya Ishihara, Yusuke Hashimoto, Hiroshi Sudoh, Atsushi Ogura
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Recently, layered material, especially transition metal dichalcogenides (TMDs) are attracting growing attention due to its unique physical properties and wide possibility in applications. In this study, the fabrication of a TMD alloy, MoS 2(1-x) Te 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7199964d08765410e9e69281ff8a3c22
https://doi.org/10.1109/edtm.2019.8731258
https://doi.org/10.1109/edtm.2019.8731258
Publikováno v:
Japanese Journal of Applied Physics. 59:065502
Raman spectroscopy was used to evaluate crystal quality of MoS2 films fabricated by RF magnetron sputtering with additional DC bias. Raman spectroscopy is a powerful tool to evaluate different physical properties of a film since phonons are sensitive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e09d568c2154a9ef42885983b43e59
https://doi.org/10.35848/1347-4065/ab9384
https://doi.org/10.35848/1347-4065/ab9384
Autor:
Yusuke Hibino, Seiya Ishihara, Kota Yamazaki, Yuya Oyanagi, Yusuke Hashimoto, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi Wakabayashi, Atsushi Ogura
Publikováno v:
ECS Meeting Abstracts. :838-838
Recent work on the research of layered materials has revealed the material’s unique physical properties, its applications in various fields, and fabrication processes to produce high quality samples. We have been focusing on transition metal dichal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7cc8dee711bdd1e0c54fcb7283dca05
https://doi.org/10.1149/ma2019-01/12/838
https://doi.org/10.1149/ma2019-01/12/838