Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Yuxiong Xue"'
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 8915-8924 (2024)
Power electronic devices face harsh radiation environments in deep space exploration. It is significant to study the reliability of solder joints of electronic devices in radiation environments. The effect of electron irradiation on the microstructur
Externí odkaz:
https://doaj.org/article/491a623ff7574271b4d0c0d72581a557
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100274- (2023)
Aerospace exploration requires electronic devices to withstand the test of extreme environments, and it is of great significance to study the reliability of packaged devices at extreme temperatures. In this paper, the Anand model is used to describe
Externí odkaz:
https://doaj.org/article/792ee0081e134edda3930589056b288c
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 4, Iss , Pp 100032- (2023)
In deep space exploration environment, electronic devices face severe tests. C4 solder joints and TSV, as the weak links of the three-dimensional packaging structure, have a significant impact on the reliability of the packaging structure. This work
Externí odkaz:
https://doaj.org/article/f54ed3eabdf9411086b4dcd120e6cfc6
Autor:
Zhiqian Zhang, Lei Liu, Lin Quan, Guohong Shen, Rui Zhang, Yuqi Jiang, Yuxiong Xue, Xianghua Zeng
Publikováno v:
Aerospace, Vol 10, Iss 12, p 982 (2023)
Accurately predicting proton flux in the space radiation environment is crucial for satellite in-orbit management and space science research. This paper proposes a proton flux prediction method based on a hybrid neural network. This method is a predi
Externí odkaz:
https://doaj.org/article/07c057ce361b41668262e7e40e81e4fd
Autor:
Fangyuan Liu, Yanli Yang, Yingdu Liu, Wen Tang, Jieqiong Zhu, Pusen Wang, Xiaoping Ouyang, Nie Zhao, Fugang Qi, Hongwei Wang, Yuxiong Xue
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 025101-025101-5 (2020)
A (Lu,Y)2SiO5:Ce (LYSO) crystal, as a heavy inorganic scintillator, is currently in high demand for various applications in the fields of particle detection. However, its high refractive index (n = 1.83) gives restriction on the measurements of rare
Externí odkaz:
https://doaj.org/article/0d45dd71682a47f5a4f073f41b23f482
Publikováno v:
Materials Research Express, Vol 8, Iss 7, p 076302 (2021)
A comparison of the microstructure, interfacial IMC layer, shear behavior and hardness of the Sn58Bi, SnBi@110P-Cu/Cu and SnBi@500P-Cu/Cu solder joints was carried out during isothermal aging in this study. Experimental results reveal that the region
Externí odkaz:
https://doaj.org/article/a70d0f941b354916afb650b8ec5e8895
Publikováno v:
Microelectronics International. 40:109-114
Purpose Concerning the radiation effects on the three-dimensional (3D) packaging in space environment, this study aims to investigate the influence of the total dose effect on the transmission characteristics of high-frequency electrical signals usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe24eb74cc76be8e5a769d83d0e575c4
https://doi.org/10.1108/mi-07-2022-0120
https://doi.org/10.1108/mi-07-2022-0120
Autor:
Lin Quan, Yenan Liu, Ling Li, Dongya Wang, Kunpeng Wang, Li Xue, Wentang Wu, Yuxiong Xue, Yang Liu, Liang Luo
Publikováno v:
Journal of Spacecraft and Rockets. 59:1455-1462
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0cc58ea2405fe725465bb64fed3d7e
https://doi.org/10.2514/1.a35173
https://doi.org/10.2514/1.a35173
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:8270-8280
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077cd942329b6b2403d06ff422e5af4f
https://doi.org/10.1007/s10854-022-07981-9
https://doi.org/10.1007/s10854-022-07981-9
Study of Synergistic Effect of Total Ionizing Dose on Single Event Gate Rupture in SiC Power MOSFETs
Autor:
Rongxing Cao, Kejia Wang, Yang Meng, Linhuan Li, Lin Zhao, Dan Han, Yang Liu, Shu Zheng, Hongxia Li, Yuqi Jiang, Xianghua Zeng, Yuxiong Xue
Publikováno v:
Chinese Physics B.
The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power MOSFETs was investigated via simulation. The device was found to be more sensitive to SEGR with TID increasing, especially at higher temperature. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7acc17e1a6c74742a83bd96269740218
https://doi.org/10.1088/1674-1056/acbde7
https://doi.org/10.1088/1674-1056/acbde7