Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yuxiong Cao"'
Publikováno v:
Solid-State Electronics. 81:163-169
An improved VBIC model for InP/InGaAs double heterojunction bipolar transistors (DHBTs) is proposed. The model accounts for the double heterojunction effect and current blocking effect with novel current expressions. New empirical formulas for the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd3b585e9aa0ef851c65d49b97bb2e6
https://doi.org/10.1016/j.sse.2012.10.019
https://doi.org/10.1016/j.sse.2012.10.019
Publikováno v:
Chinese Science Bulletin. 58:427-432
The design and measured results of a broad-band direct quadrature phase shift keying (QPSK) modulator and demodulator are described in this paper. The circuits are fabricated using 1-μm GaAs HBT technology. To suppress the local oscillator (LO) leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2c57abf559466f1e114e1e85ef51313
https://doi.org/10.1007/s11434-012-5566-4
https://doi.org/10.1007/s11434-012-5566-4
Autor:
Yu-ming Zhang, Hongfei Yao, Zhi Jin, Yong-Bo Su, Xinyu Liu, Xiaoxi Ning, Xiantai Wang, Ying-Hui Zhong, Yuxiong Cao
Publikováno v:
JOURNAL OF INFRARED AND MILLIMETER WAVES. 31:393-398
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6148b693a8a52d99538967dd9d7e416e
https://doi.org/10.3724/sp.j.1010.2012.00393
https://doi.org/10.3724/sp.j.1010.2012.00393
Autor:
Hongliang Lu, Yuxiong Cao, Zhi Jin, Xiantai Wang, Yimen Zhang, Ying-Hui Zhong, Yuming Zhang, Hong-Fei Yao
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
A W-band two-stage amplifier MMIC has been developed using a InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with coplanar waveguide topology and cascode transistors, thus leadin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e919ba0a793583200d2e7fe84c2fbe4
https://doi.org/10.1109/edssc.2013.6628045
https://doi.org/10.1109/edssc.2013.6628045
Publikováno v:
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
A two-stage double heterojunction bipolar transistor (DHBT) power MMIC fabricated in InP technology is realized using coplanar waveguide structure. The output cell unit consists of four parallel cascode fingers. Sixteen fingers are at output stage fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dafdd769754a408af761415b62bfc078
https://doi.org/10.1109/icmmt.2012.6230014
https://doi.org/10.1109/icmmt.2012.6230014
Publikováno v:
Proceedings of 2012 5th Global Symposium on Millimeter-Waves.
Two MMIC amplifiers have been developed in coplanar technology using 50-nm InAlAs/InGaAs HEMTs. The first is a sing-stage amplifier which used balanced double-stub matching networks for both input and output impedances matching. Measured gain is 8.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0165fbd1590d0d5a92baae33fac74947
https://doi.org/10.1109/gsmm.2012.6313996
https://doi.org/10.1109/gsmm.2012.6313996
Publikováno v:
Journal of Semiconductors. 34:095006
A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push—push configuration loaded with harmonic resonant network is uti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d319bddec00d1eff192eb1899f41c89a
https://doi.org/10.1088/1674-4926/34/9/095006
https://doi.org/10.1088/1674-4926/34/9/095006
Publikováno v:
Journal of Semiconductors. 34:075005
A two-stage MMIC power amplifier has been realized by use of a 1-μm InP double heterojunction bipolar transistor (DHBT). The cascode structure, low-loss matching networks, and low-parasite cell units enhance the power gain. The optimum load impedanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2937456000ae94a98fa896dfd21d155
https://doi.org/10.1088/1674-4926/34/7/075005
https://doi.org/10.1088/1674-4926/34/7/075005
Publikováno v:
2011 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT); 2011, p213-216, 4p
Autor:
Yinghui, Zhong, Yuming, Zhang, Yimen, Zhang, Yuxiong, Cao, Hongfei, Yao, Xiantai, Wang, Hongliang, Lü, Xinyu, Liu, Zhi, Jin
Publikováno v:
Journal of Semiconductors; Dec2013, Vol. 34 Issue 12, p125003-125007, 5p