Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Yuval Yaish"'
Autor:
Fernando Patolsky, Yuval Yaish, Eran Granot, Moria Kwiat, Ella Yeor, Omri Heifler, Sharon Lefler, Roi Vizel, Vadim Krivitsky, Miguel Weil
Publikováno v:
Nano Letters. 18:190-201
Silicon-based photodetectors cannot distinguish between different wavelengths. Therefore, these detectors relay on color-specific filters to achieve color separation. Color filters add complexity to color sensitive device fabrication, and hinder mini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aa54786953929c6a089a3bdee31c26b
https://doi.org/10.1021/acs.nanolett.7b03873
https://doi.org/10.1021/acs.nanolett.7b03873
Publikováno v:
Nanotechnology. 32:335202
We demonstrate band to band tunneling (BTBT) in a carbon nanotube (CNT) field effect transistor. We employ local electrostatic doping assisted by charged traps within the oxide to produce an intramolecular PN junction along the CNT. These characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cd49be14ba05e73ee7d768b7407cb6f
https://doi.org/10.1088/1361-6528/abfd56
https://doi.org/10.1088/1361-6528/abfd56
Publikováno v:
Nano Letters. 15:2945-2950
Initial or residual stress plays an important role in nanoelectronics. Valley degeneracy in silicon nanowires (SiNWs) is partially lifted due to built-in stresses, and consequently, electron-phonon scattering rate is reduced and device mobility and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2b137f5dd883eea3ac303a523cfd213
https://doi.org/10.1021/nl5047939
https://doi.org/10.1021/nl5047939
Publikováno v:
IEEE Transactions on Electron Devices. 61:3363-3371
Thermally activated axial intrusion of nickel silicides in silicon nanowires (SiNWs) is utilized to form nickel silicide/silicon contacts in SiNW field effect transistors. The growth of different nickel silicides is often accompanied by local thicken
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d686fecaece5a872a0f6d1510d2bec
https://doi.org/10.1109/ted.2014.2342502
https://doi.org/10.1109/ted.2014.2342502
Autor:
Ida Sivan, Tsvika Rabkin, Evgeny Shifman, Yael Pascal-Levi, Manish Pal-Chowdhury, Yuval Yaish, Itshak Kalifa
Publikováno v:
MRS Proceedings. 1659:119-128
Carbon nanotube field effect transistors (CNT FETs) have many possible applications in future nano-electronics due to their excellent electrical properties. However, one of the major challenges regarding their performance is the noticeable gate hyst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::569bea1c701306cdf06f660c099dbf32
https://doi.org/10.1557/opl.2014.353
https://doi.org/10.1557/opl.2014.353
Publikováno v:
Solid-State Electronics. 80:110-117
Time and temperature dependencies of nickel silicide axial growth in Si nanowires (SiNWs) were studied for a temperature range of 300–440 °C and nanowire diameters of 30–60 nm. A square root time dependence of the total silicide intrusion length
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42a8be8c36d3119355eb617351484238
https://doi.org/10.1016/j.sse.2012.11.004
https://doi.org/10.1016/j.sse.2012.11.004
A kinetic Monte Carlo approach is developed for studying growth and evaporation of nanoparticles on/off nanotubes. This study has been motivated by recent experimental advances in using nanoparticle evaporation (sublimation) off nanoparticle-decorate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdfc2beb6b95c030912c147d6cc35400
http://arxiv.org/abs/1612.08300
http://arxiv.org/abs/1612.08300
Autor:
Eitan M. Hajaj, Yael Pascal‐Levy, Evgeny Shifman, Yuval Yaish, Manish Pal-Chowdhury, Valeri Kochetkov, Oleg Shtempluck, Alexey Razin
Publikováno v:
ChemPhysChem. 13:4202-4206
Humidity plays an important role in molecular electronics. It facilitates charge movement on top of dielectric layers and modifies the device transfer characteristics. Using two different methods to probe temporal charge redistribution on the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ef772bc6f75447138b290cdbdd575b8
https://doi.org/10.1002/cphc.201200628
https://doi.org/10.1002/cphc.201200628
Publikováno v:
Defect and Diffusion Forum. :427-432
Semiconducting nanowires (NW) are implemented as the active channel of field effect transistor (FET) with linear and Schottky barrier source and drain contacts. Thermally activated axial intrusion of nickel silicides into the silicon NW from pre-patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04d5589f8d3abf71be54927d0a9e4211
https://doi.org/10.4028/www.scientific.net/ddf.323-325.427
https://doi.org/10.4028/www.scientific.net/ddf.323-325.427
Autor:
Galit Atiya, Gilad Zeevi, Vissarion Mikhelashvili, Gadi Eisenstein, Y. Shneider, Yaron Kauffmann, G. Ankonina, Amir Capua, Yuval Yaish
Publikováno v:
Journal of Applied Physics. 123:224506
We describe a new metal-insulator-semiconductor (MIS) device in which cobalt based nano particles (NPs) in a core-shell structure (Co–core and Co3O4-shell) are embedded between a thermally grown SiO2 layer and a HfO2 film deposited by atomic layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d49f3dd61d34d087aed227032a5f72
https://doi.org/10.1063/1.5026268
https://doi.org/10.1063/1.5026268