Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yuusaku Suehiro"'
Autor:
Koji Yamamoto, Aya Izumi, Yuudai Kondo, Yuusaku Suehiro, Takeshi Kaneuji, Yoshihiro Yamashita
Publikováno v:
Oral Science International. 15:31-35
Dermal flap reconstruction in the oral cavity in a patient complicated with psoriasis vulgaris has not been described yet. Here, we report the case of a 33-year-old man with untreated psoriasis vulgaris who was diagnosed with right tongue SCC (T4aN0M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b7c0707351377c1ba19c13a09989992
https://doi.org/10.1016/s1348-8643(17)30040-x
https://doi.org/10.1016/s1348-8643(17)30040-x
Autor:
Dong Wang, Keisuke Yamamoto, Kana Hirayama, Masanari Kajiwara, Youhei Sugimoto, Hiroshi Nakashima, Yuusaku Suehiro
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
High-permittivity (high-k) dielectrics with HfO2/HfxSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e632ac0077696cad4a4d4c67d78fc0
https://doi.org/10.1109/icsict.2008.4734660
https://doi.org/10.1109/icsict.2008.4734660
Autor:
Hiroshi Nakashima, Keisuke Yamamoto, Masanari Kajiwara, Yuusaku Suehiro, Dong Wang, Youhei Sugimoto, Kana Hirayama
Publikováno v:
Semiconductor Science and Technology. 23:125020
High-permittivity (high-k) dielectrics with HfO2/HfxSi1−xOy/Si structures were fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure. By changing a SiO2 film in an initial structure from plasma oxidation at a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd8bdc3830d83cf0c383230c052d60e
https://doi.org/10.1088/0268-1242/23/12/125020
https://doi.org/10.1088/0268-1242/23/12/125020
Autor:
Masanari Kajiwara, Yuusaku Suehiro, Dong Wang, Youhei Sugimoto, Keisuke Yamamoto, Hiroshi Nakashima
Publikováno v:
Applied Physics Letters. 91:112105
The effective work function (Φm,eff) of TaN on HfO2 after postmetallization annealing (PMA) was investigated using TaN∕HfO2∕SiO2∕Si as a sample structure. We found that Φm,eff on HfO2 is stable at PMA temperatures of less than 600°C and is 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9b0975daa59caa3e89973ad37ce091
https://doi.org/10.1063/1.2783472
https://doi.org/10.1063/1.2783472
Autor:
Kondo, Yuudai, Izumi, Aya, Yamamoto, Koji, Kaneuji, Takeshi, Suehiro, Yuusaku, Yamashita, Yoshihiro
Publikováno v:
Oral Science International; Jan2018, Vol. 15 Issue 1, p31-35, 5p
Autor:
Sugimoto, Youhei, Kajiwara, Masanari, Yamamoto, Keisuke, Suehiro, Yuusaku, Wang, Dong, Nakashima, Hiroshi
Publikováno v:
Applied Physics Letters; 9/10/2007, Vol. 91 Issue 11, p112105, 3p, 1 Diagram, 1 Chart, 3 Graphs