Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yuuki Aritsuka"'
Autor:
Jyunichi Suyama, Daisuke Kitayama, Miyuki Akazawa, Hiroshi Kudo, Yumi Okazaki, Tanaka Masaya, Ryohei Kasai, Kouji Sakamoto, Haruo Iida, Satoru Kuramochi, Shouhei Yamada, Yuuki Aritsuka, Mitsuhiro Takeda, Takamasa Takano, Hiroaki Sato
Publikováno v:
2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC).
The fabrication of a 2.5D glass interposer was demonstrated, and its electrical performance, including signal transmission, was characterized. Single-sided multi-level enhanced copper redistribution layers were fabricated on a glass substrate with th
Autor:
Yuuki Aritsuka, Hiroshi Fujita, Hisatake Sano, Minoru Kitada, Morihisa Hoga, Tadahiko Takikawa, Naoko Kuwahara, Satoshi Yusa
Publikováno v:
SPIE Proceedings.
We have fabricated seven masks with different patterns on a 27 mm x 34 mm single-membrane for Low Energy Electron-beam Proximity Lithography (LEEPL) by the wafer-flow process. We have examined the membrane flatness and image placement (IP) accuracy,
Autor:
Yuuki Aritsuka, Hisatake Sano, Tadahiko Takikawa, Masaru Kurosawa, Minoru Kitada, Naoya Hayashi, Morihisa Hoga, Hiroshi Fujita
Publikováno v:
SPIE Proceedings.
Masks for low energy electron proximity projection lithography (LEEPL) are fabricated starting with 200 mm silicon-on-insulator (SOI) wafers. The effect of the thickness of the buried oxide (BOX) layer of an SOI wafer on its flatness has been investi
Publikováno v:
SPIE Proceedings.
Low energy electron proximity projection lithography (LEEPL) has three types of mask formats. One of them, LEEPL 6025 square format, is so designed that electron-beam writers for photomasks can accommodate it. LEEPL 6025 square format blanks manufact
Publikováno v:
SPIE Proceedings.
In EPL, one of the issues is how to reduce the critical dimension (CD) error observed at the boundary of two complementary patterns when being stitched together to form one smooth line. This paper is concerned about edge deformation of the two lines
Publikováno v:
MRS Proceedings. 570
We investigate the growth mode and the growth mechanisms of selectively grown GaAs nanometer wire structures by metalorganic vapor phase epitaxy (MOVPE). The nanometer wire structures with (111)A or (111)B facet sidewalls are grown on SiNx masked (00