Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yuuichi Takeuchi"'
Autor:
Katsuhiro Miura, Haruna Nishimaki-Watanabe, Hiromichi Takahashi, Masaru Nakagawa, Shimon Otake, Takashi Hamada, Takashi Koike, Kazuhide Iizuka, Yuuichi Takeuchi, Kazuya Kurihara, Toshihide Endo, Shun Ito, Hironao Nukariya, Takahiro Namiki, Yoshiyuki Hayashi, Hideki Nakamura
Publikováno v:
Biomedicines, Vol 12, Iss 6, p 1277 (2024)
TAFRO syndrome is an inflammatory disorder of unknown etiology characterized by thrombocytopenia, anasarca, fever, reticulin fibrosis, renal insufficiency, and organomegaly. Despite great advancements in research on the TAFRO syndrome in the last dec
Externí odkaz:
https://doaj.org/article/c829c7d9fbe44b15950f75eae3104f46
Publikováno v:
Materials Science Forum. 897:43-46
In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperatu
Autor:
Akiba Atsuya, Hiroaki Fujibayashi, Masami Naito, Tomomi Kozu, Kazukuni Hara, Yuuichi Takeuchi, Olga Milikofu
Publikováno v:
Materials Science Forum. :339-342
In this report we were able to successfully identify and localize in 3D 3C and 6H foreign polytypes and stress in the embedded epilayer by high resolution 3D Raman spectroscopy, that were otherwise invisible under the microscope or SEM, in non-contac
Autor:
Yuuichi Takeuchi, Jacek Rabkowski, Adolf Schöner, Hans-Peter Nee, Per Ranstad, Naohiro Sugiyama, Rajesh Kumar Malhan, Dimosthenis Peftitsis, Mietek Bakowski
Publikováno v:
ECS Transactions. 50:45-52
The fabrication process of an innovative epitaxial trench JFET with vertical channel and double gate control is reviewed. Due to the excellent doping and thickness control of the epitaxial re-growth techniques, the sub-micron channel can be tailored
Publikováno v:
Silicon Carbide. :77-119
Publikováno v:
Silicon Carbide: Power Devices and Sensors, Volume 2
This paper reviews the normally-off (N- off) and normally-on (N- on) SiC junction field effect transistor (JFET) concepts and presents an innovative all-epitaxial double-gate trench JFET (DGTJFET) structure. The DGTJFET design combines the advantages
Publikováno v:
International Journal of Automation Technology. 3:99-106
In this study, a quasi-minimum time trajectory planning method for the electromagnetic attraction transfer control of a magnetic object by use of a three-link robot arm with an electromagnetic attraction hand is proposed. The three joints of the robo
Autor:
Rajesh Kumar Malhan, T. Reimann, Florin Udrea, S.J. Rashid, Yuuichi Takeuchi, Naohiro Sugiyama, Gehan A. J. Amaratunga, Mitsuhiro Kataoka
Publikováno v:
Materials Science Forum. :1067-1070
Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5
Publikováno v:
Materials Science Forum. :171-174
The migration enhanced embedded epitaxy (ME3) mechanism and 2D dopant distribution of the embedded trench region is investigated with the aim to realize the all-epitaxial, normally-off junction field effect transistor (JFET). We found that the embedd
Publikováno v:
Materials Science Forum. :175-178
The in-situ doping of aluminum and nitrogen in migration enhanced embedded epitaxy (ME3) is investigated with the aim to apply it to the realization and fabrication of all-epitaxial, normally-off 4H-SiC JFET devices. This ME3 process consists of the