Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yuui Shimizu"'
Autor:
Katsuaki Sakurai, Feng Lu, Kenro Kubota, Hiroshi Sugawara, Yoshihiko Shindo, Steve Choi, Junji Musha, Yusuke Ochi, Hao Nguyen, Hiroshi Nakamura, Yee Koh, Yasuhiro Suematsu, Ryo Fukuda, Tomoko Nishiuchi, Spiros Georgakis, Keyur Payak, Masatsugu Kojima, Sanad Bushnaq, Naoki Kobayashi, Kwang-ho Kim, Hiroe Minagawa, Manabu Sato, Yuuki Shimizu, Naoaki Kanagawa, Susumu Fujimura, Teruo Takagiwa, Kenichi Abe, Takahiro Shimizu, Toshiki Hisada, Taichi Wakui, Hiroshi Maejima, Susumu Ozawa, Makoto Miakashi, Srinivas Rajendra, Kazushige Kanda, Hiroshi Yoshihara, Namas Raghunathan, Akihiro Imamoto, Koji Hosono, Dong He, Satoshi Inoue, Masatsugu Ogawa, Seungpil Lee, Jumpei Sato, Fumihiro Kono, Yuui Shimizu, Kazuhiko Satou, Takuya Futatsuyama, Venky Ramachandra, Naohito Morozumi, Weihan Wang, Tomoharu Hashiguchi, Hicham Haibi, Noboru Shibata, Takatoshi Minamoto, Xu Li, Kouichirou Yamaguchi, Toshifumi Hashimoto, Takahiro Yamashita, Ken Cheah, Mitsuhiro Abe, Tetsuya Kaneko, Tadashi Yasufuku, Takahiro Sugimoto
Publikováno v:
ISSCC
The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1]. Since then, memory bit density has grown rapidly due to the increase in the number of stacked layers from continuous 3D technology innovations. On the other hand, t
Autor:
Hong Ding, T. Pham, Takahiro Shimizu, Junji Musha, H. Nasu, T. Ogawa, Naoki Kobayashi, Toshiki Hisada, N. Ookuma, Noboru Shibata, G. Hemink, M. Sato, Toshifumi Hashimoto, S. Sakai, K. Kanazawa, Masahiro Yoshihara, Yosuke Kato, Yasuyuki Kajitani, Tomofumi Fujimura, Kazushige Kanda, Tomohiro Sugimoto, G. Liang, Y. Matsumoto, Katsuaki Isobe, K. Iwasa, T. Kobayashi, J. Nakai, M. Inagaki, S. Inoue, T. Ariki, Masaru Koyanagi, M. Watanabe, K. Inuzuka, Yoshinao Suzuki, Naofumi Abiko, M. Kojima, Naoaki Kanagawa, Y. Honda, Y. Utsunomiya, S. Zaitsu, Makoto Miakashi, Mitsuhiro Noguchi, M. Higashitani, D. He, F. Moogat, Hardwell Chibvongodze, Mitsuaki Honma, Teruhiko Kamei, Yuui Shimizu, Cuong Trinh, K. Ino, Michio Nakagawa, Toshihiro Suzuki, Ryuji Yamashita
Publikováno v:
ISSCC
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Re
Publikováno v:
Journal of Crystal Growth. :317-320
We demonstrated an observation of excited gallium (Ga*) emission by optical emission spectroscopy (OES) during GaN growth. It was also demonstrated that crystal structure of GaN could be controlled by changing bias conditions during electron-cyclotro
Autor:
Makoto Okada, Yukihiro Higaki, Shintaro Miyazawa, Yuui Shimizu, Yasushi Nanishi, Takayuki Yanagi, Takao Ishii
Publikováno v:
Journal of Crystal Growth. :213-217
GaN thin films were grown at relatively low temperatures on multi-domain LiGaO 2 substrates by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). LiGaO 2 is one of the most promising substrates for GaN epitaxial growth beca
Autor:
Takeshi Kajiyama, Yoshiaki Asao, Ryousuke Takizawa, Makoto Nagamine, Masayoshi Iwayama, Shigeki Takahashi, Minoru Amano, Toshihiko Nagase, Tatsuya Kishi, Keiji Hosotani, Masahisa Yoshikawa, K. Itagaki, Eiji Kitagawa, Yuui Shimizu, Hisanori Aikawa, K. Tsuchida, T. Ueda, Masahiko Nakayama, Yoshihisa Iwata, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda, T. Inaba, Katsuya Nishiyama, Naoharu Shimomura, Yuji Ueda
Publikováno v:
IEEE Transactions on Magnetics. 42:2724-2726
Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current.
Autor:
Yoshiaki Asao, Yoshihiro Ueda, Keiji Hosotani, K. Tsuchida, Yuui Shimizu, Tadashi Kai, Yoshihisa Iwata, Naoharu Shimomura, Hisanori Aikawa, Sumio Ikegawa, Hiroaki Yoda
Publikováno v:
MTDT
A new test pattern, quadruplet checker board (QCKBD), is proposed which enables to evaluate magnetic crosstalk from the neighbor write lines. At first, some conventional test patterns changing the write points were applied to categorize magnetic rand
Autor:
K. Tsuchida, Sumio Ikegawa, Hiroaki Yoda, Tadashi Kai, Naoharu Shimomura, Yoshiaki Asao, Yuui Shimizu
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
In this paper, we investigate the thermal energy of MRAM cells on applied field along the easy or hard axis and its dependence on magnetic domain pattern. Furthermore the thermal stability at half-selected situation is also discussed.
Autor:
Sumio Ikegawa, Hiroaki Yoda, T. Ueda, Masahiko Nakayama, Keiji Hosotani, Yoshiaki Asao, Naoharu Shimomura, Yuui Shimizu, Minoru Amano, Hisanori Aikawa, Tadashi Kai, K. Tsuchida
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
The writing region and the repeatability of the function test and switching current fluctuation of magnetoresistive random access memory (MRAM) with a propeller shape magnetic tunnel junction (MTJ) array is evaluated. The effect of the write sequence
Autor:
Ryousuke Takizawa, Shuichi Tahara, Keiji Hosotani, T. Sugibayashi, Takeshi Kajiyama, Tsuneo Inaba, Masahiko Nakayama, Yoshihisa Iwata, K. Tsuchida, Yuui Shimizu, Yoshiaki Asao, Yuji Ueda, Sumio Ikegawa, Hiroaki Yoda, Tadashi Kai
Publikováno v:
ISSCC
A 16Mb MRAM based on 0.13mum CMOS and 0.24mum MRAM process achieves a 34ns asynchronous access and 100MHz synchronous operation, compatible with pseudo-SRAM for mobile applications. By implementation of FORK wiring scheme, the cell efficiency is rais
Autor:
Shuichi Tahara, T. Ueda, Hiroaki Yoda, Yuui Shimizu, Tatsuya Kishi, Takeshi Kajiyama, Yoshiaki Fukuzumi, Kenichi Shimura, Hisanori Aikawa, Yoshiaki Asao
Publikováno v:
Journal of Magnetism and Magnetic Materials. :1939-1940
We studied the effect of using yoke wire in MRAM applications. It was confirmed that the write current could be reduced by more than 50% in 1-bit MRAM cells as well as in memory arrays. We confirmed that 100% of the bits of a 1 kb memory array with y