Výsledky vyhledávání - "Yuto Kawasumi"

Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy

Autor: Kenji Shiojima, Yuto Kawasumi, Yuto Yasui, Yukiyasu Kashiwagi, Toshiyuki Tamai

Publikováno v: Japanese Journal of Applied Physics. 61:086506

We report basic diode characteristics and uniformity of Schottky contacts between printed Ni electrode and n-GaN on GaN epitaxial wafers annealed at 400, 500, and 600 °C. The Schottky barrier height of the samples annealed at 400 °C and 500 °C wer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17b7d5260c33508575c35b841cfa651c
https://doi.org/10.35848/1347-4065/ac7bc5

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Uniformity characterization of SiC, GaN, and α-Ga2O3 Schottky contacts using scanning internal photoemission microscopy

Autor: Takashi Shinohe, Tomoyoshi Mishima, Kenji Shiojima, Yoshinobu Narita, Noboru Fukuhara, Yuto Kawasumi, Fumimasa Horikiri

Publikováno v: Japanese Journal of Applied Physics. 60:108003

Local variation within one dot electrode was characterized for Ni/SiC, Ni/GaN and Cu/Ti/α-Ga2O3 Schottky contacts by using scanning internal photoemission microscopy (SIPM). SIPM measurements were conducted for 200-μmΦ and 400-μmΦ dot electrodes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::780774912e0197a177989fc01e6eb6b4
https://doi.org/10.35848/1347-4065/ac2917

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