Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Yuto Hakamada"'
Autor:
Yuto Hakamada, Shunji Ozaki
Publikováno v:
Key Engineering Materials. 534:141-145
SiOx nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a67ae80296cb219a54b8c3a034ff195
https://doi.org/10.4028/www.scientific.net/kem.534.141
https://doi.org/10.4028/www.scientific.net/kem.534.141
