Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yutaro Iyama"'
Autor:
Reem Alhasani, Taichi Yabe, Yutaro Iyama, Nobutaka Oi, Shoichiro Imanishi, Quang Ngoc Nguyen, Hiroshi Kawarada
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide ba
Externí odkaz:
https://doaj.org/article/3ea4eb941523412dbfdd0d4a207cc70a
Autor:
Yu Hao Chang, Yutaro Iyama, Shuto Kawaguchi, Teruaki Takarada, Hirotaka Sato, Reona Nomoto, Kaito Tadenuma, Shaili Falina, Mohd Syamsul, Yukihiro Shintani, Junya Suehiro, Hiroshi Kawarada
Publikováno v:
IEEE Sensors Journal. 23:9110-9119
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7294812db4f3e4d1d1124bf2d3b5a4bc
https://doi.org/10.1109/jsen.2023.3257348
https://doi.org/10.1109/jsen.2023.3257348
Autor:
Taichi Yabe, Reem Mohammed Alhasani, Hiroshi Kawarada, Yutaro Iyama, Shoichiro Imanishi, Quang N. Nguyen, Nobutaka Oi
Publikováno v:
Scientific Reports. 12
Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68ca42796c123c6eb456ce3b6b6c692a
https://doi.org/10.1038/s41598-022-05180-4
https://doi.org/10.1038/s41598-022-05180-4
Autor:
Reem Alhasani, Taichi Yabe, Yutaro Iyama, Mohammed Alhasani, Quang N. Nguyen, Hiroshi Kawarada
Publikováno v:
2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b327bd795cfaaecf56d5eac1a8302a
https://doi.org/10.1109/nmdc50713.2021.9677505
https://doi.org/10.1109/nmdc50713.2021.9677505
Publikováno v:
Diamond and Related Materials. 91:15-21
In this work, we fabricated graphene solution-gate field-effect transistor (SGFET) to investigate the pH sensitivity of carboxyl functional groups. The functionalization of graphene with carboxyl was achieved through anodization by applying a sequent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95f213e867b95e3a2d7cba69695978b
https://doi.org/10.1016/j.diamond.2018.11.005
https://doi.org/10.1016/j.diamond.2018.11.005
Autor:
Shuto Kawaguchi, YuHao Chang, Yutaro Iyama, Kaito Tadenuma, Teruaki Takarada, Hiroshi Kawarada
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573229a4cfdc7ce6a6a84be7e4a12a32
https://doi.org/10.7567/ssdm.2020.g-10-04
https://doi.org/10.7567/ssdm.2020.g-10-04
Autor:
Kyosuke Tanabe, Asrulnizam Abd Manaf, Te Bi, Kaito Tadenuma, Mohd Syamsul, Yu Hao Chang, Yutaro Iyama, Hiroshi Kawarada, Shaili Falina
Publikováno v:
physica status solidi (a). 217:2000634
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::963cf1aaa92685ed63efc6d6d00e09e5
https://doi.org/10.1002/pssa.202000634
https://doi.org/10.1002/pssa.202000634
Autor:
Mohd Syamsul, Yu Hao Chang, Yutaro Iyama, Shuto Kawaguchi, Kaito Tadenuma, Shaili Falina, Teruaki Takarada, Hiroshi Kawarada
Publikováno v:
physica status solidi (a). 218:2000278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e585842626348883d57c9cd71f490fde
https://doi.org/10.1002/pssa.202000278
https://doi.org/10.1002/pssa.202000278