Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Yutaka Mihashi"'
Autor:
C. Watatani, Yoshihiko Hanamaki, Masayoshi Takemi, Yutaka Mihashi, Tetsuya Nishimura, Kenichi Ono
Publikováno v:
Journal of Crystal Growth. 281:227-233
We have investigated in situ monitoring of growth rate and composition by reflection measurements during AlGaInP and InGaAsP growth in metalorganic vapor phase epitaxy. The reflection transient shows Fabry–Perot oscillations during epitaxial growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2537c02624ee047b6a3ffb6e792f7398
https://doi.org/10.1016/j.jcrysgro.2005.04.020
https://doi.org/10.1016/j.jcrysgro.2005.04.020
Autor:
Ssatoshi Yokota, Ryo Hattori, Hideo Takeuchi, Soichiro Ukawa, Akihiro Shima, Yoshitugu Yamamoto, Wataru Susaki, Nobuhito Ohno, Yutaka Mihashi
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:793-797
Subband energy levels of AlGaAs double quantum well (QW) layer structure with a separate confinement scheme are determined by photoreflectance at room temperature. Also subband energy levels are compared with those determined by the self-excited elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0422046cd9369a69b185d7c2a3acf192
https://doi.org/10.1016/j.physe.2003.11.202
https://doi.org/10.1016/j.physe.2003.11.202
Publikováno v:
Journal of Crystal Growth. 194:277-285
Surface morphology has been studied by means of Nomarski and atomic-force microscopy regarding grown or etched surfaces of vicinal (1 1 0)GaAs substrates. The substrates used were misoriented by 2° or 6° towards [ 0 0 1 ], [ 0 0 1 ], [ 1 1 1 ], or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef49086f819ddbfc811ff80c4a207dc8
https://doi.org/10.1016/s0022-0248(98)00657-5
https://doi.org/10.1016/s0022-0248(98)00657-5
Publikováno v:
Journal of Crystal Growth. 191:18-23
We have investigated the behavior of group V atoms at growth interrupted heterointerfaces in an InP/AsH 3 -exposure/InP multilayer structure grown by metalorganic vapor-phase epitaxy, whose interfaces are exposed to AsH 3 gases, by means of high-reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2026408c56f75bddd8c0b64d867e8aae
https://doi.org/10.1016/s0022-0248(98)00118-3
https://doi.org/10.1016/s0022-0248(98)00118-3
Autor:
Zempei Kawazu, Yutaka Mihashi, Masahiro Nunoshita, Diethard Marx, Tetsuya Takami, Takeshi Nakayama, Tatsuo Ozeki
Publikováno v:
Journal of Crystal Growth. :87-91
Selective area growth of GaN stripes with a flat and smooth (0 0 0 1) top plane has been achieved by optimizing MOCVD growth conditions. Strain of AlN/GaN heterostructures is reduced on selectively grown stripes even for a total AlN layer thickness o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b973fe7f020d4f0ce2a6b4ef6da2ca
https://doi.org/10.1016/s0022-0248(98)00178-x
https://doi.org/10.1016/s0022-0248(98)00178-x
Autor:
Tatsuya Kimura, T. Shiba, Yutaka Mihashi, Masayoshi Takemi, Kimitaka Shibata, S. Takamiya, Masao Aiga
Publikováno v:
Journal of Crystal Growth. 180:1-8
Growth behavior of sulfur-doped n-InP around reactive ion-etched (RIE) mesas has been investigated for realization of p-substrate buried heterostructure laser utilizing metalorganic vapor phase epitaxy. It is found that the growth of n-InP layer on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba215ab8c75cc017af847e7c0a4f308
https://doi.org/10.1016/s0022-0248(97)00195-4
https://doi.org/10.1016/s0022-0248(97)00195-4
Autor:
S. Takamiya, Yoshihiro Hisa, Yutaka Mihashi, Yasunori Miyazaki, T. Takiguchi, Kimitaka Shibata, Masao Aiga, T. Itagaki, A. Takemoto, Masayoshi Takemi, K. Goto
Publikováno v:
Journal of Crystal Growth. 170:705-709
A tapered thickness profile and a high thickness enhancement ratio of 3.5 in the waveguide which are necessary for a narrow beam have been realized by selective-area metalorganic chemical vapor deposition (MOCVD) growth using a tapered shape twin mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a038b2748e1b95d66084f09b82641639
https://doi.org/10.1016/s0022-0248(96)00597-0
https://doi.org/10.1016/s0022-0248(96)00597-0
Publikováno v:
Journal of Electronic Materials. 25:369-374
A comparative study has been carried out regarding selective embedding growth of InP by metalorganic chemical vapor deposition (MOCVD) around dry-etched mesas, using two types of reactors: a conventional horizontal type and a highspeed rotating-susce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855864f88dd825020acf5f3a5760bc2d
https://doi.org/10.1007/bf02666604
https://doi.org/10.1007/bf02666604
Publikováno v:
Journal of Electronic Materials. 25:411-414
We have investigated the selective growth ofpnp- InP by metalorganic chemical vapor deposition (MOCVD) around mesas. The mesas were formed by reactiveion-etching using SiO2 masks having various patterns. The patterns include stripes along different c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0918c554d24f969adbbce728ed0ede8c
https://doi.org/10.1007/bf02666612
https://doi.org/10.1007/bf02666612
Autor:
Eitaro Ishimura, S. Ochi, Takuji Sonoda, S. Takamiya, T. Ishida, Tatsuya Kimura, Yutaka Mihashi, Wataru Susaki
Publikováno v:
Journal of Crystal Growth. 158:418-424
We have investigated the feasibility of using undoped Al0.48In0.52 As layers grown by low-pressure metalorganic chemical vapor deposition as current-blocking layers in buried-hetrostructure laser diodes. A high resistivity of over 2 × 1010 Ω · cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f68ee6ed3e762742756743a230d3ec
https://doi.org/10.1016/0022-0248(95)00456-4
https://doi.org/10.1016/0022-0248(95)00456-4