Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yuta Arata"'
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 34, Pp n/a-n/a (2024)
Abstract In this study, nitrogen (N) is doped into VO2 thin films through mist chemical vapor deposition (CVD), and the effect of the doping on metal–insulator transition (MIT) temperatures is investigated. The N‐doped VO2 thin films are grown on
Externí odkaz:
https://doaj.org/article/04f8f1b189cc4a92822c4e4b68f02157
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055310-055310-5 (2020)
LiNbO3 and LiTaO3 substrates are used in wide-bandwidth applications such as surface acoustic wave filter and show structural similarity to α-Ga2O3. In this study, we demonstrated the phase control of Ga2O3 epitaxial thin films, grown by mist chemic
Externí odkaz:
https://doaj.org/article/172fb24947b24e228a58791f72ef0beb
Publikováno v:
ACS Omega. 7:41768-41774
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a4c9039c3a1666685231765e7fa5d2c
https://doi.org/10.1021/acsomega.2c06062
https://doi.org/10.1021/acsomega.2c06062
Publikováno v:
Journal of the Society of Materials Science, Japan. 71:830-834
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::599942e792fff0b8526fd97dfc158fff
https://doi.org/10.2472/jsms.71.830
https://doi.org/10.2472/jsms.71.830
Publikováno v:
MRS Advances.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31bb6938c524cf7df3337ef9642cb794
https://doi.org/10.1557/s43580-023-00534-0
https://doi.org/10.1557/s43580-023-00534-0
Publikováno v:
MRS Advances. 5:1671-1679
Bendable p-type NiO and n-type In2O3 thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotationa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bb4b8302f535c4eea860970ec298c89
https://doi.org/10.1557/adv.2020.85
https://doi.org/10.1557/adv.2020.85
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1037
We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066684520b950351074f434446081d18
https://doi.org/10.35848/1347-4065/ac4688
https://doi.org/10.35848/1347-4065/ac4688
Publikováno v:
CrystEngComm. 20:6236-6242
In this study, single-phase e-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates. When the Ga2O3 films were directly grown on c-plane sapphire substrates, they tended to grow with a mixture of α-, β-, and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed59b257c527c791c24fd65a58666a0
https://doi.org/10.1039/c8ce01128a
https://doi.org/10.1039/c8ce01128a
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Orthorhombic $\varepsilon-\mathrm{Ga}2\mathrm{O}_{3}$ film was grown on (100) TiO 2 substrate by mist CVD. XRD and TEM revealed that the thin film was a two-layer structure of $\varepsilon - \mathrm{Ga}2\mathrm{O}_{3}$ and $\beta-$ Ga2O 3 layers. Epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f12ff8ca27062ffa0beab630771028a
https://doi.org/10.1109/imfedk48381.2019.8950694
https://doi.org/10.1109/imfedk48381.2019.8950694
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055310-055310-5 (2020)
LiNbO3 and LiTaO3 substrates are used in wide-bandwidth applications such as surface acoustic wave filter and show structural similarity to α-Ga2O3. In this study, we demonstrated the phase control of Ga2O3 epitaxial thin films, grown by mist chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::513fbe73b64fadd3dfd3dd44ea2f8ad7
https://doaj.org/article/172fb24947b24e228a58791f72ef0beb
https://doaj.org/article/172fb24947b24e228a58791f72ef0beb