Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Yusuke Matsukura"'
Autor:
Koji Tsunoda, Yusuke Matsukura, Ryo Suzuki, Junichi Kon, Shigekazu Okumura, Shuichi Tomabechi, Hironori Nishino
Publikováno v:
Journal of Crystal Growth. 477:243-248
The surface morphology of GaSb was investigated by changing growth conditions such as thermal oxide desorption temperature, growth temperature, and growth step by solid source molecular beam epitaxy. At high temperature growth, the pits caused by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a697d0e4f718de221c0d6b1d1f8a753e
https://doi.org/10.1016/j.jcrysgro.2017.02.032
https://doi.org/10.1016/j.jcrysgro.2017.02.032
Publikováno v:
Journal of Solid State Chemistry. 211:162-169
We compared reactivity between CO2 and Li2CuO2 with that between CO2 and Li4SiO4 by using XRD, SEM observation, and thermogravimetry in order to study fundamentally a potential of Li2CuO2 oxide for application to solid CO2 absorbents. The CO2 absorpt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34303d60958befd863cf75a76872864f
https://doi.org/10.1016/j.jssc.2013.12.018
https://doi.org/10.1016/j.jssc.2013.12.018
Publikováno v:
Infrared Technology and Applications XLII.
In the development of InAs/GaSb Type-II superlattice (T2SL) infrared photodetectors, the surface leakage current at the mesa sidewall must be suppressed. To achieve this requirement, both the surface treatment and the passivation layer are key techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cc1fd610eed00f32edb5a9c18c6731
https://doi.org/10.1117/12.2223583
https://doi.org/10.1117/12.2223583
Publikováno v:
Journal of the Ceramic Society of Japan. 116:1283-1288
Particle size dependence of CO2 absorption rate of powdered Li4SiO4 with four kinds of particle sizes was studied by SEM observation, particle size distribution measurement, and thermogravimetry. Average particle sizes of the powdered single phase Li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50b19ff089f3da0162e66139a9b4cab
https://doi.org/10.2109/jcersj2.116.1283
https://doi.org/10.2109/jcersj2.116.1283
Autor:
Yusuke Matsukura
Publikováno v:
SPIE Proceedings.
We first derive a formula that can successfully describe the device nonlinearity between the IR incidence corresponding to the blackbody temperature T and the pixel output V for infrared detectors such as QWIPs or QDIPs, which have a peak (not cutoff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37346a9ffb7916c77e1abb1af9c85384
https://doi.org/10.1117/12.2176922
https://doi.org/10.1117/12.2176922
Publikováno v:
Infrared Physics & Technology. 47:164-168
We developed a Monte-Carlo simulation to calculate the characteristics of QDIP devices. To implement QDs into our Monte-Carlo simulation, QDs are expressed as a sort of “scattering centers”. Infrared absorption is implemented by the change of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2245f430362cc89a01c1f6005ad27ccd
https://doi.org/10.1016/j.infrared.2005.02.021
https://doi.org/10.1016/j.infrared.2005.02.021
Autor:
Tetsuya Miyatake, Toshio Fujii, Prafula Masalkar, Yoshihiro Miyamoto, Hironori Nishino, Yusuke Matsukura
Publikováno v:
Infrared Physics & Technology. 45:1-7
We investigated the performance of a 640 × 480 pixel quantum well infrared photodetectors focal plane array (QWIP-FPA) when an elliptical-curve random grating was used as the optical coupler for the QWIP. The design of the elliptical random coupler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc70cd178a8015f8a26ea761ab84a6e
https://doi.org/10.1016/s1350-4495(03)00136-1
https://doi.org/10.1016/s1350-4495(03)00136-1
Publikováno v:
Infrared Physics & Technology. 52:257-259
We studied the responsivity–dark current relationship of quantum dot infrared photodetector (QDIP) devices published by several research groups. We found that the dark currents ( I d s) of these devices increased in proportion to the square of resp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2866e288cf5e442d262cd59c82e41695
https://doi.org/10.1016/j.infrared.2009.05.023
https://doi.org/10.1016/j.infrared.2009.05.023
Publikováno v:
Journal of Crystal Growth. 203:464-472
We demonstrated for the first time the selective epitaxial growth of n-GaAs using dimethylgalliumchloride (DMGaCl) by a multi-wafer LP-MOVPE system. We achieved complete selective epitaxy for the GaAs at a growth rate of more than 0.4 μm/h with an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0351d0ecbd743345a6eed9e2f5abbb2c
https://doi.org/10.1016/s0022-0248(99)00111-6
https://doi.org/10.1016/s0022-0248(99)00111-6
Publikováno v:
Journal of Applied Physics. 82:617-621
The CF4/O2 or CF4 plasma induced damage in Si-implanted n-type GaAs crystals has been investigated by using Hall measurement and secondary ion mass spectrometry (SIMS) analysis. We found that sheet resistance degraded after plasma exposure and postan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07525eede7931a4ae59ff1bda8baebfe
https://doi.org/10.1063/1.365589
https://doi.org/10.1063/1.365589