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pro vyhledávání: '"Yusuke Kuboki"'
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Low temperature aluminum-induced crystallization (AIC) was successfully introduced to make a Si paste pn junction device. The Si paste was fabricated by using a planetary ball miller from Si source materials. Oxidation of Si paste was suppressed by l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27085e1f8554efd9ea5d3a9e8343b773
https://doi.org/10.1109/edtm50988.2021.9420845
https://doi.org/10.1109/edtm50988.2021.9420845
