Výsledky vyhledávání

Material Development for ArF Immersion Resist Extension

Autor: Yusuke Anno, Motoyuki Shima, Kazuyuki Kasahara

Publikováno v: Journal of Photopolymer Science and Technology. 24:219-225

ArF immersion process is being widely applied for advanced device manufacturing. ArF immersion lithography can cover 4x nm hp lithography. In addition, double patterning process allows extendibility towards 2x nm hp lithography. From the point of vie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c6fb2d39f80094d76851ae01af09031
https://doi.org/10.2494/photopolymer.24.219

Zobrazit plný text záznamu

Non Topcoat Self-freezing Photoresist for Double Patterning Process

Autor: Tsutomu Shimokawa, Michihiro Mita, Yoshikazu Yamaguchi, Kenji Hoshiko, Hiromitsu Tanaka, Yukio Nishimura, Goji Wakamatsu, Yusuke Anno, Hitoshi Osaki, Tomohisa Fujisawa, Makoto Sugiura, Koji Ito

Publikováno v: Journal of Photopolymer Science and Technology. 23:199-204

Double patterning is one of the most promising techniques for sub-30nm half pitch device manufacturing. Several techniques such as dual-trench (litho-etch-litho-etch: LELE) and dual-line (litho-litho-etch : LLE) have been reported. Between them, the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3bc04fd43b4f59e91d6036339a3a9683
https://doi.org/10.2494/photopolymer.23.199

Zobrazit plný text záznamu

Freezing Material Development for Double Patterning Process

Autor: Yoshikazu Yamaguchi, Kenji Hoshiko, Shiro Kusumoto, Yusuke Anno, Masafumi Hori, Tsutomu Shimokawa, Goji Wakamatsu, Koichi Fujiwara, Michihiro Mita, Tomohiko Kakizawa, Takeo Shio

Publikováno v: Journal of Photopolymer Science and Technology. 22:641-646

Double patterning is one of the most promising lithography techniques for sub-40nm half-pitch device manufacturing. Several variations of double patterning processes have been reported by research groups, including a dual-trench process (litho-etch-l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::954cb83eb6a7abe03543071670a3da25
https://doi.org/10.2494/photopolymer.22.641

Zobrazit plný text záznamu

Preparation, morphology, and physical properties of transparent PSt hybrid materials containing silicone macromonomer

Autor: Kazuki Daimatsu, Katsuhiro Inomata, Hideki Sugimoto, Kazuki Yokoi, Tomoki Ikeda, Eiji Nakanishi, Yusuke Anno

Publikováno v: Journal of Applied Polymer Science. 108:362-369

The aim of this study was to prepare transparent polystyrene (PSt) hybrid materials containing silicone macromonomer. Silicone urethane methacrylate (SiUMA) was synthesized by the reaction between the hydroxyl end groups of a silicone macromonomer an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6a103d1a39fe7097e8f4f33913ee3b3
https://doi.org/10.1002/app.27666

Zobrazit plný text záznamu

Double Patterning Materials for Sub-40nm Application

Autor: Koichi Fujiwara, Makoto Sugiura, Yoshikazu Yamaguchi, Tomohiro Kakizawa, Yusuke Anno, Akimasa Soyano, Atsushi Nakamura, Masafumi Hori, Tsutomu Shimokawa

Publikováno v: Journal of Photopolymer Science and Technology. 21:691-696

Double patterning is one of the most promising candidates for sub-40nm half-pitch devices. Several variation of double patterning processes have been reported by research groups, including a dual-trench process (litho-etch-litho-etch) and a dual-line

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::848e84849a9888a4972a2461a71cdbd1
https://doi.org/10.2494/photopolymer.21.691

Zobrazit plný text záznamu

Roughness and variability in EUV lithography: Who is to blame? (part 1)

Autor: Kenji Hoshiko, Yusuke Anno, Vassilios Constantoudis, Roel Gronheid, John J. Biafore, Alessandro Vaglio Pret, Todd R. Younkin, Gustaf Winroth

Publikováno v: Extreme Ultraviolet (EUV) Lithography IV.

Process variability in today’s EUV lithography might be a showstopper for features below 27nm dimensions. At these feature sizes, electrical devices are influenced by quantum effects and thus have to face the discrete behavior of light and matter.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50dbc927071d10d6fc3af3ab67fef4aa
https://doi.org/10.1117/12.2011584

Zobrazit plný text záznamu

Polymer blends for directed self-assembly

Autor: Tomoki Nagai, Yusuke Anno, Yuuji Namie, Yoshikazu Yamaguchi, Yoshi Hishiro, Takehiko Naruoka, Shinya Minegishi

Publikováno v: Alternative Lithographic Technologies V.

The advantage of blend DSA (Directed Self Assembly) is milder anneal condition than PS-b-PMMA BCP DSA materials and availability of conventional instruments. In this paper, blend type DSA was applied for hole patterning. Target patterns were contact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57a4a035b894c3d7a017d360590b6a49
https://doi.org/10.1117/12.2011418

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání