Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Yusuke, Oniki"'
Autor:
Efrain Altamirano Sanchez, Herbert Struyf, Tatsunobu Suzuki, Frank Holsteyns, Yusuke Oniki, Ken Harada, Kan Takeshita, Tomohiro Kusano
Publikováno v:
Solid State Phenomena. 314:71-76
3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si1-XGeX and Si are controllable. Si1-XGeX selective etching with those formulations was also verified using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43d18ce1d196689c174e7d166bac0d27
https://doi.org/10.4028/www.scientific.net/ssp.314.71
https://doi.org/10.4028/www.scientific.net/ssp.314.71
Autor:
Harold Dekkers, Frank Holsteyns, Lars-Ake Ragnarsson, Naoto Horiguchi, Boon Teik Chan, Hideaki Iino, Yusuke Oniki, Daire J. Cott, Efrain Altamirano Sanchez, Toby Hopf, Farid Sebaai, Eugenio Dentoni Litta
Publikováno v:
Solid State Phenomena. 314:119-126
This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19006e5961359aac26a8f8e14ee2f174
https://doi.org/10.4028/www.scientific.net/ssp.314.119
https://doi.org/10.4028/www.scientific.net/ssp.314.119
Autor:
Naoto Horiguchi, Basoene Briggs, Boon Teik Chan, Steven Demuynck, Maryam Hosseini, Geert Mannaert, Hans Mertens, Yusuke Oniki, Sujith Subramanian, Zheng Tao
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35bb8cded1f02032d285eea4d5ef4386
https://doi.org/10.1117/12.2615984
https://doi.org/10.1117/12.2615984
Autor:
Yusuke Muraki, Yusuke Oniki, Pallavi P. Gowda, Efrain Altamirano-Sánchez, Hans Mertens, Naoto Horiguchi, Frank Holsteyns, Subhadeep Kal, Cheryl Alix, Kaushik Kumar, Aelan Mosden, Trace Hurd, Nobuyuki Takahashi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cddf542bde2bd4b7a45bd858701f6c81
https://doi.org/10.1117/12.2613723
https://doi.org/10.1117/12.2613723
Autor:
Kawarazaki, Hikaru, Nakano, Teppei, Ishizu, Takaaki, Tanaka, Takayoshi, Liu, Wen, Chen, Jason, Kawashima, Tomohiko, Wu, Ai Ping, Sebaai, Farid, Lai, Ju Geng, Yusuke, Oniki, Altamirano-Sanchez, Efrain
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2023, Vol. 346 Issue: 1 p23-28, 6p
Publikováno v:
ECS Transactions. 92:3-12
This paper addresses the opportunities and challenges of wet and dry selective etches in the integration of gate-all-around (GAA) field-effect transistor (FET), which is emerging as a promising solution to replace FinFET for the advanced logic device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978b3a192487ed9024a09320ea99d6a0
https://doi.org/10.1149/09202.0003ecst
https://doi.org/10.1149/09202.0003ecst
Autor:
Philippe Leray, Valentina Spampinato, R. Koret, Alain Moussa, Ilse Hoflijk, J. Hung, Y. Muraki, Thomas Nuytten, Janusz Bogdanowicz, Johan Meersschaut, Alexis Franquet, Stefanie Sergeant, Yusuke Oniki, N. Claessens, Thierry Conard, Karine Kenis, Anne-Laure Charley, D. Van den Heuvel
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Nanosheet Field-Effect Transistors (FETs) are candidates to replace today’s finFETs as they offer both an enhanced electrostatic control and a reduced footprint. The processing of these devices involves the selective lateral etching, also called ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac9351cae9d7e2b039311645714042ac
https://doi.org/10.1117/12.2581800
https://doi.org/10.1117/12.2581800
Autor:
Subhadeep Kal, Karine Kenis, Trace Hurd, Yusuke Muraki, Peter Biolsi, Cheryl Alix, Aelan Mosden, Naoto Horiguchi, Yusuke Oniki, Frank Holsteyns, Kaushik A. Kumar, Efrain Altamirano-Sánchez, Chanemougame Daniel
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
R&D on transistor fabrication and scaling for current and future technology nodes involves various 3D-device architectures like the established finFET (fin “Field Effect Transistor”), and newer architectures like GAA (Gate All Around) which may i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8995183416d62cb4c70a29a608020eab
https://doi.org/10.1117/12.2550539
https://doi.org/10.1117/12.2550539
Autor:
Guy Vereecke, Naoto Horiguchi, Lars-Ake Ragnarsson, Eugenio Dentoni Litta, Yusuke Oniki, Tom Schram, Harold Dekkers, Frank Holsteyns
Publikováno v:
Solid State Phenomena. 282:132-138
A self-limiting wet etching of metal thin films has been developed for the replacement metal gate patterning in advanced logic devices, which will have aggressively scaled gate length and fin pitches. A uniform and highly selective wet etching of pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cae8673f095c0f84b842a1387671a2e
https://doi.org/10.4028/www.scientific.net/ssp.282.132
https://doi.org/10.4028/www.scientific.net/ssp.282.132
Autor:
Juergen Boemmels, Qi Wang, Subhadeep Kal, Frank Holsteyns, Trace Q. Hurd, Matthew Falugh, Aelan Mosden, Cheryl Pereira, Yusuke Oniki, Kaushik A. Kumar, Julien Ryckaert, Jeffrey Smith, Peter Biolsi
Publikováno v:
Advanced Etch Technology for Nanopatterning VIII.
Area scaling without compromising on performance has become a challenge for technology nodes beyond N7. Gate all-around (GAA) device architecture for N5 and beyond technology nodes is emerging as a promising solution and is being heavily investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf5e67119024899d73b6dcf75e0df655
https://doi.org/10.1117/12.2514741
https://doi.org/10.1117/12.2514741