Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yusnizam Yusuf"'
Autor:
Yusnizam Yusuf, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, Mohd Syamsul
Publikováno v:
Crystals, Vol 13, Iss 1, p 90 (2023)
This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the
Externí odkaz:
https://doaj.org/article/ded32dfc16404d6692249f61464b62cf
Publikováno v:
Microelectronics International. 40:46-52
Purpose This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The change of the AlN atomic structure with sapphire orientation w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109301a8789940bda6f5d55f33618c87
https://doi.org/10.1108/mi-04-2022-0065
https://doi.org/10.1108/mi-04-2022-0065
Autor:
Norzaini Zainal, Yusnizam Yusuf, M.E.A. Samsudin, Christian J. Zollner, Steven P. DenBaars, Ahmad Shuhaimi Abu Bakar, Michael Iza
Publikováno v:
Microelectronics International. 38:113-118
Purpose The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate. Design/methodology/approach In this work, the effect of the nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb6f21422a2929d3199db8eec96fb349
https://doi.org/10.1108/mi-02-2021-0012
https://doi.org/10.1108/mi-02-2021-0012
Autor:
Mohd Fairus Ahmad, Shamsul Amir Abdul Rais, Abdullah Sulaiman, Zainuriah Hassan, Hayatun Najiha binti Hussin, Mohd Natashah Norizan, Mohd Nazri Abd Rahman, Muhamad Ikram Md Taib, Yuka Akimoto, Ahmad Shuhaimi Abu Bakar, Dai Shoji, Keiji Nagai, Yusnizam Yusuf
Publikováno v:
Optical Materials Express = 11. 3:926-935
金沢大学先端科学・社会共創推進機構
To produce a deep green (530 nm–570 nm) LED, the suitable indium (In) composition in the InxGa1-xN/GaN multi-quantum well (MQW) structure is crucial because a lower indium composition will sh
To produce a deep green (530 nm–570 nm) LED, the suitable indium (In) composition in the InxGa1-xN/GaN multi-quantum well (MQW) structure is crucial because a lower indium composition will sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cf73923dd7c66a85d55c0899a6e7be1
http://hdl.handle.net/2297/00067145
http://hdl.handle.net/2297/00067145
Autor:
Yusnizam Yusuf, N. Chanlek, Wan Haliza Abd Majid, Mohamad Raqif Mahat, Ahmad Shuhaimi, Noor Azrina Talik, Afiq Aizuddin Bin Anuar, Mohd Nazri Abd Rahman, Norzaini Zainal, Muhammad Imran Mustafa Abdul Khudus
Publikováno v:
CrystEngComm. 22:3309-3321
An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc65a692684639ef82bbd8b0c0277acb
https://doi.org/10.1039/d0ce00113a
https://doi.org/10.1039/d0ce00113a
Autor:
Muhammad Imran Mustafa Abdul Khudus, Mohd Nazri Abd Rahman, Norzaini Zainal, Yusnizam Yusuf, M.E.A. Samsudin, Hongjian Li, Ahmad Shuhaimi, Abdullah Sulaiman
Publikováno v:
Superlattices and Microstructures. 120:319-326
A high-quality aluminium nitride buffer layers were grown on (0 0 0 1) sapphire substrate at standard pressure with a subsequent low growth temperature via metal organic chemical vapour deposition. The preparation of aluminium nitride buffer layers w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::537fa38c76c199aaebe9703b32807c05
https://doi.org/10.1016/j.spmi.2018.05.024
https://doi.org/10.1016/j.spmi.2018.05.024
Publikováno v:
Materials Science in Semiconductor Processing. 133:105968
In this work, aluminum nitride (AlN) nucleation was varied at 30, 60 and 120 s as an attempt to reduce the surface roughness and the dislocation density of the overgrown AlN layer. By increasing the nucleation time up to 60 s, the surface became smoo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0da0265ee7bfc2b72b875fd0dc8f68d
https://doi.org/10.1016/j.mssp.2021.105968
https://doi.org/10.1016/j.mssp.2021.105968
Autor:
Zainuriah Hassan, M.A.A.Z. Md Sahar, W. Maryam, Yusnizam Yusuf, M.E.A. Samsudin, Norzaini Zainal
Publikováno v:
Thin Solid Films. 736:138915
In this work, aluminum nitride (AlN) layers were grown on sapphire substrate with different times and temperatures of nitridation through metal organics chemical vapor deposition growth technique. Besides, during the growth process, trimethylaluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66fe5285b126e4e6bae777d80244bd74
https://doi.org/10.1016/j.tsf.2021.138915
https://doi.org/10.1016/j.tsf.2021.138915
Publikováno v:
Applied Surface Science. 362:572-576
A single-crystalline with high quality of gallium nitride epilayers was grown on silicon (1 1 1) substrate by metal organic chemical vapor deposition. The process of nitridation surface treatment was accomplished on silicon (1 1 1) substrate by flowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dfa1bd337b26194de2b6be9c36c3b4e
https://doi.org/10.1016/j.apsusc.2015.10.226
https://doi.org/10.1016/j.apsusc.2015.10.226
Autor:
Zainuriah Hassan, M.A.A.Z. Md Sahar, M.A. Ahmad, M. E. A. Samsudin, Yusnizam Yusuf, N.A. Hamzah, Rahil Izzati Mohd Asri, A.M. Hanafiah, Way Foong Lim
Publikováno v:
Journal of Physics: Conference Series. 1535:012042
In this work, aluminium nitride (AlN) single layer has been successfully grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at low reactor pressure. The effects of growth temperature, ammonia (NH3) flux and trimethylalumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed3092692f4a405670baa94e2a572db
https://doi.org/10.1088/1742-6596/1535/1/012042
https://doi.org/10.1088/1742-6596/1535/1/012042