Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yusaku Shiotsu"'
Autor:
Yusaku Shiotsu, Satoshi Sugahara
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 134-144 (2022)
A binarized neural network (BNN) accelerator based on a processing-in-memory (PIM)/ computing-in-memory (CIM) architecture using ultralow-voltage retention static random access memory (ULVR-SRAM) is proposed for the energy minimum-point (EMP) operati
Externí odkaz:
https://doaj.org/article/2196fe31d17d4073a22ecdbce6be4270
Publikováno v:
IEEE Open Journal of Circuits and Systems, Vol 2, Pp 520-533 (2021)
An ultralow-voltage retention SRAM (ULVR-SRAM) cell using header and footer power-switches (HFPSs) is investigated for power-gating (PG) applications. The cell can change its operational mode depending on the cell voltage ( ${V} _{\mathrm{ cell}}$ )
Externí odkaz:
https://doaj.org/article/fcfaf1abbc12487b97dd4c12107803be
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 056316-056316-4 (2017)
Bi-layered zinc oxide (ZnO) and bismuth substituted yttrium iron garnet (Bi:YIG) was fabricated and magneto-optically investigated. Enhancement of Faraday rotation and magnetic circular dichroism (MCD) was observed. The wavelength of MCD enhancement
Externí odkaz:
https://doaj.org/article/bd41239fa70a491c97548bd7d01f6a57
Publikováno v:
IEEE Open Journal of Circuits and Systems, Vol 2, Pp 520-533 (2021)
An ultralow-voltage retention SRAM (ULVR-SRAM) cell using header and footer power-switches (HFPSs) is investigated for power-gating (PG) applications. The cell can change its operational mode depending on the cell voltage ( ${V} _{\mathrm{ cell}}$ )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918d5d5637b70e7d44b0f78c1b7466b0
https://doi.org/10.1109/ojcas.2021.3104945
https://doi.org/10.1109/ojcas.2021.3104945
Publikováno v:
IEEE Transactions on Electron Devices. 67:3834-3842
Modeling and design of a thin-film $\pi $ -type micro thermoelectric generator ( $\mu $ TEG) using a new module structure, which is powered by body heat, are demonstrated for wearable device (WD) applications. The module has a vacuum/insulator-hybrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29d6afbc26881ce0103003a5664a3d4b
https://doi.org/10.1109/ted.2020.3006168
https://doi.org/10.1109/ted.2020.3006168
Autor:
Yusuke Shuto, Shuu'ichirou Yamamoto, Hiroshi Funakubo, Satoshi Sugahara, Yusaku Shiotsu, Minoru Kurosawa
Publikováno v:
IEEE Transactions on Electron Devices. 67:3852-3860
A new piezoelectronic transistor (PET) is proposed for ultralow-voltage high-speed integrated circuits. The device is comprised of a cylindrical piezoresistive (PR) channel and a torus-shaped piezoelectric (PE) gate surrounding the channel for applyi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dbaee0546dcd5e23718d01ced9f15b0
https://doi.org/10.1109/ted.2020.3008891
https://doi.org/10.1109/ted.2020.3008891
Design optimization and performance of a micro thermoelectric generator (µTeg)using silicon nanowires (Si-NWs) for the Seebeck elements are investigated for wearable device (WD) applications. A vacuum/insulator-hybrid isolation module structure is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbb294c68825857bbcb31ebc16e4126e
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100814138
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100814138
Design methodologies of new piezoelectronic transistors (PETs) are developed, which satisfy a desired on-current at an ultralow-voltage (e.g. 0.2 V) or a desired off-current in the shutdown state. Both the designs can keep their on-current density to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aaf219659818b47972b8afd06e9aa0a2
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100814137
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100814137
Publikováno v:
Journal of Electronic Materials; Oct2023, Vol. 52 Issue 10, p6902-6910, 9p
Autor:
Shiotsu, Yusaku, Yamamoto, Shuu'ichirou, Shuto, Yusuke, Funakubo, Hiroshi, Kurosawa, Minoru Kuribayashi, Sugahara, Satoshi
Publikováno v:
IEEE Transactions on Electron Devices; Sep2020, Vol. 67 Issue 9, p3852-3860, 9p