Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yusaku Kashiwagi"'
Autor:
Hirokazu Asahara, Takayoshi Shimura, Shuji Azumo, Takuji Hosoi, Tsunenobu Kimoto, Kenji Yamamoto, Takashi Nakamura, Heiji Watanabe, Shigetoshi Hosaka, Masatoshi Aketa, Yusaku Kashiwagi
Publikováno v:
Japanese Journal of Applied Physics. 59:021001
Aluminum-based high-permittivity (high-k) gate dielectrics and suitable metal electrodes were systematically designed for advanced SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs). Although electron injection into alumina (Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5b35a39e417d63b7cb19801d7020bf
https://doi.org/10.7567/1347-4065/ab65a3
https://doi.org/10.7567/1347-4065/ab65a3
Autor:
Kenji Yamamoto, Tsunenobu Kimoto, Yusaku Kashiwagi, Shigetoshi Hosaka, Takayoshi Shimura, Takuji Hosoi, Masatoshi Aketa, Hirokazu Asahara, Shuji Azumo, Takashi Nakamura, Heiji Watanabe
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Advanced metal/high-k gate stack technology for SiC-based power MOSFET was demonstrated. We found that the Hf incorporation into aluminum oxynitride (HfAlON gate insulator) combined with TIN electrode effectively improves the stability of threshold v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b46769a80212e0c5c5cb2bc34b2a2344
https://doi.org/10.23919/ispsd.2017.7988906
https://doi.org/10.23919/ispsd.2017.7988906
Autor:
Nicolo Chiodarelli, Gerald Beyer, Yusaku Kashiwagi, Bart Vereecke, Daire J. Cott, Stefan De Gendt, Lieve Teugels, Masahito Sugiura, Cedric Huyghebaert, Zsolt Tokei, Philippe M. Vereecken, Rudy Caluwaerts, Marleen H. van der Veen, Marc Heyns
Publikováno v:
Microelectronic Engineering. 106:106-111
Carbon nanotubes (CNTs) were integrated successfully into 150nm contact holes having a TiN underlayer and a Cu single damascene top contact module. All the integration steps for CNT integration, for patterning the Cu top contact and the mask-set used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d069e8d085980aba77090cc87cf570
https://doi.org/10.1016/j.mee.2012.09.004
https://doi.org/10.1016/j.mee.2012.09.004
Publikováno v:
IEEE International Interconnect Technology Conference.
A carbon nanotube (CNT) contact length scaling is used to derive the electron mean-free path (λ CNT ) after full integration. A CNT-to-metal contact resistance of 76 Ω and lower was obtained for 150 nm diameter contacts. By estimating the number o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747f582a4fcf018574c829832e2e3c4c
https://doi.org/10.1109/iitc.2014.6831865
https://doi.org/10.1109/iitc.2014.6831865
Publikováno v:
Solar Energy Materials and Solar Cells. 48:85-91
We report the correspondence between the photoluminescence (PL) measurement, monochromatic-light-beam-induced current (MBIC) measurement and defect delineation in polycrystalline cast-Si solar cells. It was found that the peak of the band-edge PL emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2d0de04f2ce5f2b32096eb12e93b2a9
https://doi.org/10.1016/s0927-0248(97)00073-1
https://doi.org/10.1016/s0927-0248(97)00073-1
Autor:
Zsolt Tokei, Cedric Huyghebaert, Masahito Sugiura, Daire J. Cott, Yohan Barbarin, Yusaku Kashiwagi, Marleen H. van der Veen, Bart Vereecke
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
We discuss the improvement in the electrical characterization and the performance of 150 nm diameter contacts filled with carbon nanotubes (CNT) and a Cu damascene top metal on 200mm wafers. The excellent agreement between the yield curves for the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::182cc0f9c5fea5e968b0f9d580b4349a
https://doi.org/10.1109/iitc.2013.6615601
https://doi.org/10.1109/iitc.2013.6615601
Autor:
Takuji Hosoi, Shuji Azumo, Hirokazu Asahara, Yuki Nakano, Tsunenobu Kimoto, Ryota Nakamura, Shigetoshi Hosaka, Shuhei Mitani, Yusaku Kashiwagi, Takayoshi Shimura, Takashi Nakamura, Heiji Watanabe
Publikováno v:
2012 International Electron Devices Meeting.
We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a7e54bfba51bfd0462fb0f045032548
https://doi.org/10.1109/iedm.2012.6478998
https://doi.org/10.1109/iedm.2012.6478998
Autor:
Y. Barbarin, Daire J. Cott, Zsolt Tokei, M. H. Van der Veen, Cedric Huyghebaert, Bart Vereecke, Masahito Sugiura, Yusaku Kashiwagi
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf38781c751dab741b8c07336c6e4a9
https://doi.org/10.7567/ssdm.2012.c-1-2
https://doi.org/10.7567/ssdm.2012.c-1-2
Autor:
Daire J. Cott, Marleen H. van der Veen, Bart Vereecke, Xiaoxing Ke, Stefan De Gendt, Yusaku Kashiwagi, Masahito Sugiura, Johannes Vanpaemel, Philippe M. Vereecken, Zsolt Tokei, Cedric Huyghebaert
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
This paper discusses the electrical and structural characterization of 150 nm diameter contacts filled with carbon nanotubes (CNTs) and a Cu damascene top metal. We present the first images of CNTs in direct contact with the top metal. A CNT tip clea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25804f93313995f684818e122b22459d
https://doi.org/10.1109/iitc.2012.6251670
https://doi.org/10.1109/iitc.2012.6251670
Autor:
Marc Heyns, Nicolo Chiodarelli, Yusaku Kashiwagi, Daire J. Cott, Guido Groeseneken, Yunlong Li, Philippe M. Vereecken, Olivier Richard, Kai Arstila, Stefan De Gendt, Sugiura Masahito
Publikováno v:
Nanotechnology. 22(8)
Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0f46d12245b78c16f71629c1414441f
https://pubmed.ncbi.nlm.nih.gov/21242623
https://pubmed.ncbi.nlm.nih.gov/21242623