Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Yury Yu. Illarionov"'
Autor:
Yury Yu. Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-15 (2020)
The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D techno
Externí odkaz:
https://doaj.org/article/a3906599e6e3493a9e85dbcbc3c20750
Autor:
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 972-978 (2018)
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the h
Externí odkaz:
https://doaj.org/article/cc3c1d6d53254562a8b094a90e326b52
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h
Autor:
Mario Lanza, Theresia Knobloch, Michael Waltl, Yury Yu. Illarionov, Takashi Taniguchi, Kenji Watanabe, Fabian Ducry, Tibor Grasser, Christian Schleich, Mathieu Luisier, Mikhail I. Vexler, Stefan Wachter, Thomas Mueller
Publikováno v:
Nature Electronics
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling limits place extreme demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfie
Autor:
Emanuele A. Casu, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu, Yury Yu. Illarionov, Nicolo Oliva, Matteo Cavalieri
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1163-1169 (2019)
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society
We propose double-gated n-type WSe2 FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO2 ALD on an Al2O3 seed layer obtained from the evaporation and oxidation by air exposure of a
Publikováno v:
Nature Electronics. 4:870-871
Autor:
Deji Akinwande, Gianluca Fiori, Mikhail I. Vexler, Frank Schwierz, M. Jech, Yury Yu. Illarionov, Mario Lanza, Max C. Lemme, Thomas Mueller, Tibor Grasser, Theresia Knobloch
Publikováno v:
Nature Communications
Nature Communications 11, 3385 (2020). doi:10.1038/s41467-020-16640-8
Nature Communications, Vol 11, Iss 1, Pp 1-15 (2020)
Nature Communications 11, 3385 (2020). doi:10.1038/s41467-020-16640-8
Nature Communications, Vol 11, Iss 1, Pp 1-15 (2020)
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materi
Autor:
Franz Schanovsky, Bernhard Stampfer, Gerhard Rzepa, Theresia Knobloch, Tibor Grasser, Marco M. Furchi, Thomas Mueller, Michael Waltl, Yury Yu. Illarionov
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 972-978 (2018)
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the h
Publikováno v:
Solid-State Electronics. 185:108043
Despite the breathtaking progress already achieved for electronic devices built from 2D materials, they are still far from exploiting their full theoretical performance potential. Many of these problems are due to the lack of suitable insulators whic
Autor:
Theresia Knobloch, Kirby K. H. Smithe, Eric Pop, Tibor Grasser, Michael Waltl, Yury Yu. Illarionov
Publikováno v:
IEEE Electron Device Letters. 38:1763-1766
We report considerable improvement in the hysteresis and reliability of MoS2 field-effect transistors (FETs) achieved by chemical vapor deposition (CVD) of single-layer MoS2 and dielectric encapsulation. Our results show that a high-quality 15-nm thi