Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Yury P. Yakovlev"'
Publikováno v:
Georesursy, Vol 22, Iss 1, Pp 32-38 (2020)
This article is devoted to the problem of studying the petroleum potential of the underexplored territories of the European part of Russia, in particular, the Vychegda trough. Taken a new approach to assessing the hydrocarbon potential of the Vychegd
Externí odkaz:
https://doaj.org/article/3e1c902a3f5547c1b4f85261f32b9c0a
Autor:
Alexei N. Baranov, Mikhail Roiz, Roland Teissier, A. M. Monakhov, E.V. Kunitsyna, Yury P. Yakovlev
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2020, 127 (17), pp.173105. ⟨10.1063/5.0004273⟩
Journal of Applied Physics, American Institute of Physics, 2020, 127 (17), pp.173105. ⟨10.1063/5.0004273⟩
In the present paper, we investigate a special type of optical coupling between two electrically pumped semiconductor whispering gallery mode lasers. We fabricate microdisk lasers with a conjunction between the laser cavities, making the coupling str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8177132d6bd061bd5b4e3087b136818c
https://hal.archives-ouvertes.fr/hal-03009370
https://hal.archives-ouvertes.fr/hal-03009370
Autor:
Vladimir A. Lazarev, Mikhail K. Tarabrin, Vasilii Voropaev, Dmitrii Vlasov, Yury P. Yakovlev, Gleb G. Konovalov, Valerii Karasik, Daniil Batov, Alexander Donodin, I. A. Andreev
Publikováno v:
XIV International Conference on Pulsed Lasers and Laser Applications.
We study the operating speed of high-speed photodetector based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact depending on the wavelength, radiation power, and bias voltage. The ultra-fast fiber lasers and high-speed oscillosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55bd98f9b95d40166ea513a7e92bb184
https://doi.org/10.1117/12.2554899
https://doi.org/10.1117/12.2554899
Autor:
E.V. Kunitsyna, Daniil Batov, Dmitrii Vlasov, Aleksandr Donodin, Yury P. Yakovlev, Mikhail K. Tarabrin, Vasilii Voropaev, I. A. Andreev, Gleb Konovalov, Vladimir A. Lazarev
Publikováno v:
Applied Optics. 60:2263
We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 µm as a function of optical input power and reverse bias voltage. The experimental measurement re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f5a0c54eb8572f905278740f68e4ed4
https://doi.org/10.1364/ao.418139
https://doi.org/10.1364/ao.418139
Publikováno v:
Acta Physica Polonica A. 127:1007-1009
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75077a1edadfe7c4d63f043fcc21baf1
https://doi.org/10.12693/aphyspola.127.1007
https://doi.org/10.12693/aphyspola.127.1007
Autor:
Tamara S. Lagunova, Tamara I. Voronina, Konstantin D. Moiseev, Yury P. Yakovlev, Robert V. Parfeniev, Maya P. Mikhailova
Publikováno v:
Physica B: Condensed Matter. 404:5247-5250
Magnetic impurity behavior have been studied in type II p-GaInAsSb/p-InAs heterostructures grown by liquid-phase epitaxy on InAs substrate heavily doped with manganese ( p =(5−7)×10 18 cm −3 ). Ferromagnetic properties of these structures become
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef132452587ea9101495cb159b170c1
https://doi.org/10.1016/j.physb.2009.08.283
https://doi.org/10.1016/j.physb.2009.08.283
Autor:
Maya P. Mikhailova, Leonid V. Danilov, Karina V. Kalinina, Edward V. Ivanov, Nikolay D. Stoyanov, Georgy G. Zegrya, Yury P. Yakovlev, Alice Hospodkova, Jiri Pangrac, Marketa Zikova, Eduard Hulicius
Heterostructures and nanostructures with quantum wells (QWs) based on the GaSb/InAs/AlSb system are promising for developing optoelectronic devices (light-emitting diodes, lasers, photodetectors) because they cover the mid-infrared spectral range (1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb29373455bcb0fdcfebf4675cede93
https://doi.org/10.1117/3.1002245.ch5
https://doi.org/10.1117/3.1002245.ch5
Publikováno v:
AIP Conference Proceedings.
This paper briefly presents some important aspects of the GaSb‐based material growth, as well as the performance of photodiodes and TPV devices for the 0.9–2.55 μm spectral range. A reproducible technique has been developed for the production of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ee0b7098fe80113d9959f42dc96aa7
https://doi.org/10.1063/1.2733229
https://doi.org/10.1063/1.2733229
Autor:
Vyacheslav A. Berezovets, Konstantin D. Moiseev, V. I. Nizhankovskii, Robert V. Parfeniev, Maya P. Mikhailova, Yury P. Yakovlev
Publikováno v:
SPIE Proceedings.
The observation of the Quantum Hall effect (QHE) in a semimetal channel with coexisting electrons and holes, simultaneously, at the type II broken-gap p-GaIn0.16As0.22Sb/p-InAs single heterointerface based on unintentionally doped quaternary solid so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c25014ab3ecec857b23ad5b09a72c1c
https://doi.org/10.1117/12.514547
https://doi.org/10.1117/12.514547
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c73b4bf0b267c904d072d03d50db14ca
https://doi.org/10.1117/12.514303
https://doi.org/10.1117/12.514303