Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yury Oshmyansky"'
Publikováno v:
Journal of Microelectromechanical Systems. 26:1132-1139
This paper presents the design, fabrication, and characterization of piezoelectric micromachined ultrasound transducers (PMUTs) based on scandium aluminum nitride (ScxAl1–xN) thin films (x = 15%). ScAlN thin film was prepared with a dual magnetron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398ae3d1dbca8901113d999f30c8cb0e
https://doi.org/10.1109/jmems.2017.2712101
https://doi.org/10.1109/jmems.2017.2712101
Publikováno v:
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS).
This paper presents a promising device design for Super High Frequency (SHF) Lateral Field Excitation Cross-sectional Lame Mode Resonators (LFE CLMRs). Advancements over the state-of-the-art are made possible by harnessing the full capabilities of 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e70390eff49ee9ff759b6e684e909f85
https://doi.org/10.1109/mems46641.2020.9056279
https://doi.org/10.1109/mems46641.2020.9056279
Autor:
Yury Oshmyansky, Sergey Mishin
Publikováno v:
2018 IEEE International Ultrasonics Symposium (IUS).
Recently, highly Sc doped aluminum nitride films have been used for variety of applications ranging from microphones to PMUT sensors. Deposition on different substrate surfaces such as Pt, Mo, W, Si, SiO2 and SiN (both patterned and un-patterned)lead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9081e64b3769faf5274d4ad03fe4f578
https://doi.org/10.1109/ultsym.2018.8579889
https://doi.org/10.1109/ultsym.2018.8579889
Autor:
Gianluca Piazza, Zachary Schaffer, Sergey Mishin, Abhay Kochhar, Luca Colombo, Yury Oshmyansky
Publikováno v:
2018 IEEE Micro Electro Mechanical Systems (MEMS).
This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (k t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea450991f2952a50e465cd4325e4872
https://doi.org/10.1109/memsys.2018.8346673
https://doi.org/10.1109/memsys.2018.8346673
Publikováno v:
2017 IEEE International Ultrasonics Symposium (IUS).
This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators (LVRs). The ScAlN films, which can be sputter-deposited such as undoped Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a9f6a531d59b11500941694a15cc960
https://doi.org/10.1109/ultsym.2017.8092916
https://doi.org/10.1109/ultsym.2017.8092916
Autor:
Sergey Mishin, Yury Oshmyansky
Publikováno v:
2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFC).
In the past, most BAW and FBAR filters were produced on 150mm wafers. Typical yield on 150mm wafers was > 90% [1], [2]. In the last few years, most filter manufacturers started migrating to 200mm wafers in order to reduce the cost of manufacturing. U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd36f1362f7c19e8a0b218118e24ac3d
https://doi.org/10.1109/fcs.2017.8088952
https://doi.org/10.1109/fcs.2017.8088952
Autor:
Yury Oshmyansky, Sergey Mishin
Publikováno v:
2016 IEEE International Ultrasonics Symposium (IUS).
Most standard processes only require controlling average stress on the sputter deposited films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5071de661e5f32ab6e5cf9fc320520
https://doi.org/10.1109/ultsym.2016.7728377
https://doi.org/10.1109/ultsym.2016.7728377
Publikováno v:
2016 Solid-State, Actuators, and Microsystems Workshop Technical Digest.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92c413f1f04711eede8fb1d61495259
https://doi.org/10.31438/trf.hh2016.116
https://doi.org/10.31438/trf.hh2016.116
Autor:
Yury Oshmyansky, Sergey Mishin
Publikováno v:
2016 IEEE International Frequency Control Symposium (IFCS).
FBAR (thin film bulk acoustic resonator) filters are widely used in making filters for wireless applications [1]. Until recently, most of the FBAR filters were manufactured on 150mm wafers. In the last couple of years, manufacturing of the FBAR devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26925e4613a0bc417a65abc12ef551e
https://doi.org/10.1109/fcs.2016.7546731
https://doi.org/10.1109/fcs.2016.7546731
Autor:
Yury Oshmyansky, Sergey Mishin
Publikováno v:
2015 Joint Conference of the IEEE International Frequency Control Symposium & the European Frequency and Time Forum.
There have been several investigations [1], [2], [3], that demonstrated benefits of adding dopants such as (Sc) or combination of other materials, like Zr/Mg for example, to the aluminum nitride (AlN) films in order to increase coupling coefficient (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b86437276315c4ff33623b1a01af1f5
https://doi.org/10.1109/fcs.2015.7138957
https://doi.org/10.1109/fcs.2015.7138957