Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yury O. Kulanchikov"'
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1190 (2023)
The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and ELOG methods and had different dislocation densities were studied via the electron-beam-indu
Externí odkaz:
https://doaj.org/article/f9cda1a2506c44918457007d301706b5
Publikováno v:
Micromachines; Volume 14; Issue 6; Pages: 1190
The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and ELOG methods and had different dislocation densities were studied via the electron-beam-indu