Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yury Matveyev"'
Autor:
Finn Zahari, Richard Marquardt, Matthias Kalläne, Ole Gronenberg, Christoph Schlueter, Yury Matveyev, Georg Haberfehlner, Florian Diekmann, Alena Nierhauve, Jens Buck, Arndt Hanff, Gitanjali Kolhatkar, Gerald Kothleitner, Lorenz Kienle, Martin Ziegler, Jürgen Carstensen, Kai Rossnagel, Hermann Kohlstedt
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract Memristive devices are under intense development as non‐volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel computing primitives. In this respect, interface‐based memristi
Externí odkaz:
https://doaj.org/article/58dd7d7895d74d068782d7e50a345b0f
Autor:
Maksim Zhuk, Sergei Zarubin, Igor Karateev, Yury Matveyev, Evgeny Gornev, Gennady Krasnikov, Dmitiry Negrov, Andrei Zenkevich
Publikováno v:
Frontiers in Neuroscience, Vol 14 (2020)
The development of highly integrated electrophysiological devices working in direct contact with living neuron tissue opens new exciting prospects in the fields of neurophysiology and medicine, but imposes tight requirements on the power dissipated b
Externí odkaz:
https://doaj.org/article/30eaa51caa354314b7060fb9e9e562e9
Autor:
Finn Zahari, Richard Marquardt, Matthias Kalläne, Ole Gronenberg, Christoph Schlueter, Yury Matveyev, Georg Haberfehlner, Florian Diekmann, Alena Nierhauve, Jens Buck, Arndt Hanff, Gitanjali Kolhatkar, Gerald Kothleitner, Lorenz Kienle, Martin Ziegler, Jürgen Carstensen, Kai Rossnagel, Hermann Kohlstedt
Publikováno v:
Advanced Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18be609afaa4f5054db71d489ca13fb4
https://doi.org/10.1002/aelm.202201226
https://doi.org/10.1002/aelm.202201226
Autor:
A. V. Shadrin, Ekaterina Kondratyuk, Anastasia Chouprik, E. S. Gornev, Roman V. Kirtaev, Dmitrii Negrov, Maksim Zhuk, Yury Matveyev
Publikováno v:
IEEE Transactions on Electron Devices. 68:4891-4896
One of the most attractive types of novel nonvolatile memory concepts is resistive random access memory (ReRAM) based on a reversible (“soft”) dielectric breakdown effect. The interest is caused by combining simple architecture with promising per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fe57bff3d18807980663c728905f7e
https://doi.org/10.1109/ted.2021.3105089
https://doi.org/10.1109/ted.2021.3105089
Autor:
Lutz Baumgarten, Martina Müller, Christoph Schlueter, Thomas Mikolajick, Terence Mittmann, Uwe Schroeder, Yury Matveyev, Thomas Szyjka
Publikováno v:
ACS Applied Electronic Materials. 2:3152-3159
The interface formation between ferroelectric HfO2 layers and TiN bottom electrodes was studied by hard X-ray photoelectron spectroscopy and directly correlated to the electric polarization charact...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c339a90588a75060a9a5ebfc17cbb8e2
https://doi.org/10.1021/acsaelm.0c00503
https://doi.org/10.1021/acsaelm.0c00503
Autor:
Thomas Szyjka, Lutz Baumgarten, Oliver Rehm, Claudia Richter, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Publikováno v:
Physica status solidi / Rapid research letters 16(10), 2100582-(2022). doi:10.1002/pssr.202100582
Lanthanum (La) doping is considered as a promising route to overcome reliability issues of switchable ferroelectric HfO2-based devices. This study links the local chemistry at the La lattice sites with local and collective electronic properties of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aaf18ad1a1992ef7f358132e5dba2c6
https://juser.fz-juelich.de/record/912276
https://juser.fz-juelich.de/record/912276
Autor:
Tianlun Yu, John Wright, Guru Khalsa, Betül Pamuk, Celesta S. Chang, Yury Matveyev, Xiaoqiang Wang, Thorsten Schmitt, Donglai Feng, David A. Muller, Huili Grace Xing, Debdeep Jena, Vladimir N. Strocov
Publikováno v:
Science Advances
Description
Addressing design of future quantum devices, the study uncovers electronic structure of a superconductor-semiconductor interface.
The electronic structure of heterointerfaces is a pivotal factor for their device functionality. W
Addressing design of future quantum devices, the study uncovers electronic structure of a superconductor-semiconductor interface.
The electronic structure of heterointerfaces is a pivotal factor for their device functionality. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59dceb38df1232cffd4b8142a5264467
https://doi.org/10.1126/sciadv.abi5833
https://doi.org/10.1126/sciadv.abi5833
Autor:
Anna, Dmitriyeva, Vitalii, Mikheev, Sergei, Zarubin, Anastasia, Chouprik, Giovanni, Vinai, Vincent, Polewczyk, Piero, Torelli, Yury, Matveyev, Christoph, Schlueter, Igor, Karateev, Qiong, Yang, Zhaojin, Chen, Lingling, Tao, Evgeny Y, Tsymbal, Andrei, Zenkevich
Publikováno v:
ACS nano. 15(9)
Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::cd798cca78528e83779424723f04099b
https://pubmed.ncbi.nlm.nih.gov/34468129
https://pubmed.ncbi.nlm.nih.gov/34468129
Autor:
Dmitrii Negrov, Ekaterina Kondratyuk, Andrei Zenkevich, Anastasia Chouprik, Andrey M. Markeev, Vitalii Mikheev, Yury Lebedinskii, Maxim G. Kozodaev, Yury Matveyev, Sergei Zarubin
Publikováno v:
ACS Applied Materials & Interfaces. 11:32108-32114
While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbe67eab537192b5c33249937257638f
https://doi.org/10.1021/acsami.9b08189
https://doi.org/10.1021/acsami.9b08189
Autor:
Andrei Gloskovskii, Vitalii Mikheev, Andrei Zenkevich, Abinash Kumar, James M. LeBeau, Everett D. Grimley, D. V. Negrov, Sergei Zarubin, Evgeny Y. Tsymbal, Yury Matveyev
Publikováno v:
Nanoscale. 11:19814-19822
The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO2) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. The switchable polarization of ferroelectric HfO2 controls functi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cee0eb13e6d82d1d3dfd7fd94b4033e
https://doi.org/10.1039/c9nr05904k
https://doi.org/10.1039/c9nr05904k