Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yury Georgievich Shreter"'
Autor:
Yury Georgievich Shreter, Yu. T. Rebane, V. S. Kogotkov, Alexander M. Ivanov, M. V. Virko, A. V. Klochkov, N. I. Bochkareva
Publikováno v:
Semiconductors. 49:827-835
It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hoppin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97f21af339cb5863db05f0dc296fec1
https://doi.org/10.1134/s1063782615060056
https://doi.org/10.1134/s1063782615060056
Publikováno v:
Semiconductors. 48:1079-1087
The phenomenon of the emission efficiency droop of InGaN/GaN quantum wells (QWs) in light-emitting diode p-n structures is studied. The influence exerted by two basic processes on the emission efficiency is considered: tunnel injection into a QW and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c09696fe33b19313f680918adfedf9
https://doi.org/10.1134/s1063782614080065
https://doi.org/10.1134/s1063782614080065
Autor:
A. V. Klochkov, Y. T. Rebane, Yury Georgievich Shreter, Y. S. Lelikov, R. I. Gorbunov, A. I. Tsyuk, A. L. Bogatov, N. I. Bochkareva, F. E. Latyshev, Andrey Zubrilov
Publikováno v:
Semiconductors. 43:1499-1505
Comparative study of the photoluminescence (PL) from quantum wells (QWs) in forward-biased p-GaN/InGaN/n-GaN structures and electroluminescence from these structures has been carried out. It is shown that, upon application of a forward bias, a charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd8a5dbc839527170c64f6456af0820
https://doi.org/10.1134/s1063782609110177
https://doi.org/10.1134/s1063782609110177
Publikováno v:
physica status solidi (a). 202:2880-2887
Light scattering by dislocations in group-III nitrides has been studied. The effects of dislocation strain field and hollow cores on light scattering have been investigated. It is found that the coreless edge dislocation and the edge dislocations wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64af210f717985fd8e91fcb99547331
https://doi.org/10.1002/pssa.200421095
https://doi.org/10.1002/pssa.200421095
Publikováno v:
Applied Surface Science. 166:300-303
We report results of calculations of radiative efficiency of In x Ga 1− x N quantum wells embedded in wurtzite GaN epilayer. It was found that misfit dislocations with density up to ∼10 5–6 cm −1 could improve the quantum efficiency of the In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123ad6945dff7842636f3373fb8d109c
https://doi.org/10.1016/s0169-4332(00)00437-2
https://doi.org/10.1016/s0169-4332(00)00437-2
Publikováno v:
physica status solidi (a). 180:307-313
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cdc23a91e7624022f90cfd0e9456c0
https://doi.org/10.1002/1521-396x(200007)180:1<307::aid-pssa307>3.0.co
https://doi.org/10.1002/1521-396x(200007)180:1<307::aid-pssa307>3.0.co
Autor:
Dmitry V. Tarkhin, Pan-Tzu Chang, Eugeny A. Girnnov, Yury Georgievich Shreter, Vladislav E. Bougrov, Sergey Stepanov, Natalia Bochkareva, Wang Nang Wang, Y. T. Rebane, Pei Jih Wang
Publikováno v:
SPIE Proceedings.
Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The transient current time dependencies are non-exponential a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb48a84ca1c3014391c53177bac11dc7
https://doi.org/10.1117/12.476553
https://doi.org/10.1117/12.476553
Autor:
Yury Georgievich Shreter, Y. T. Rebane, Vladislav E. Bougrov, Pei Jih Wang, C. L. Tseng, B. S. Yavich, Wang Nang Wang, Sergey Stepanov
Publikováno v:
SPIE Proceedings.
A III-nitride blue LED structure based on the system of two wells with charge asymmetric resonance tunneling (CART), which allows enhancing the number of the electrons captured into the active region with the quantum well, was systematically studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0db90c7e423b0337185786570a1843f
https://doi.org/10.1117/12.450033
https://doi.org/10.1117/12.450033