Výsledky vyhledávání - "Yury Galitsyn"

Optimal Stage Determination of Sapphire Nitridation Process Completion under High-Energy Electron Beam Influence

Autor: Konstantin S. Zhuravlev, Timur V. Malin, Vladimir G. Mansurov, D. S. Milakhin, Yury Galitsyn

Publikováno v: 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe9affbed5608817cb45e2087a5e474e
https://doi.org/10.1109/edm49804.2020.9153543

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Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux

Autor: Vladimir G. Mansurov, Yury Galitsyn, S. A. Teys, D. S. Milakhin, Timur V. Malin, Konstantin Zhuravlev

Publikováno v: Applied Surface Science. 571:151276

Evolution of atomic and electronic structures during high temperature Si(1 1 1) surface nitridation under ammonia flux was studied in details by the STM/STS techniques. The adsorption and intermediate phases arising at low doses preceding the (8 × 8

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15229bcfc75f334f3d427f908743d16a
https://doi.org/10.1016/j.apsusc.2021.151276

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Autor: Yury Galitsyn, D. S. Milakhin, K. S. Zhuravlev, Vladimir G. Mansurov, Timur V. Malin

Publikováno v: Journal of Thermal Analysis and Calorimetry. 133:1099-1107

Chemical kinetics of a two-dimensional (2D) AlN layer formation on the (0001) sapphire (Al2O3) surface during nitridation as function of ammonia flux and temperature is investigated by reflection high-energy electron diffraction. The process on the s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa50046c08738044f25cd4da07a19cd8
https://doi.org/10.1007/s10973-018-7116-z

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2D AlN crystal phase formation on (0001) Al 2 O 3 surface by ammonia MBE

Autor: Vladimir G. Mansurov, Konstantin Zhuravlev, Timur V. Malin, Yury Galitsyn

Publikováno v: physica status solidi c. 12:443-446

Kinetics of a two-dimensional (2D) AlN layer formation on (0001) sapphire (Al2O3) surface during nitridation at different ammonia fluxes is investigated by reflection high energy electron diffraction (RHEED). The process on the surface is described i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3dcdf21678feccbec6e2f0c90d6b1995
https://doi.org/10.1002/pssc.201400168

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Thermodynamic and kinetic aspects of AlN crystal formation on (0001)Al 2 O 3 surface by ammonia MBE

Autor: Konstantin Zhuravlev, Vladimir G. Mansurov, Yury Galitsyn, Timur V. Malin

Publikováno v: physica status solidi c. 11:613-616

Influence of temperature on AlN formation on (0001) Al2O3 surface under ammonia flux (nitridation process) has been investigated by high-energy electron diffraction. A significant temperature dependence of AlN formation rate in the temperature range

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d96e230f8b8b5767feefe42ce9e03c3c
https://doi.org/10.1002/pssc.201300674

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Electron‐Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface

Autor: Yury Galitsyn, Vladimir G. Mansurov, Konstantin Zhuravlev, Timur V. Malin, D. S. Milakhin

Publikováno v: physica status solidi (b). 256:1800516

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e61b34281f023fe9b2c3a9d4f02ed0d
https://doi.org/10.1002/pssb.201800516

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GaN Islands density growth kinetics on (0001) AlN surface by Ammonia molecular-beam epitaxy

Autor: K. S. Zhuravlev, A Nikitin, Yury Galitsyn, Vladimir G. Mansurov

Publikováno v: 2008 9th International Workshop and Tutorials on Electron Devices and Materials.

At the present work 3D nucleation kinetics of GaN on (0001)AlN was experimentally studied. The initial stages of the GaN growth on the flat AlN surface were monitored by a real-time reflection high-energy electron diffraction (RHEED) technique. Expon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec495d80a3c876d5efa0dea12169f6b2
https://doi.org/10.1109/sibedm.2008.4585843

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Gallium arsenide photocathode utilizing an AIGaAs/p+-GaAs/AIGaAs heteroepitaxial structure grown by molecular beam epitaxy

Autor: Sakhno, V. I., Dolgikh, A. V., Chubarev, V. G., Marakhovka, I. I., Yury Galitsyn, Mansurov, V. G., Suranov, A. S.

Publikováno v: Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7012198008aae9d38978fdaf201491c0
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030353251&partnerID=MN8TOARS

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InAs(111)A surface upon various chemical treatments studied by RHEED and XPS

Autor: Yury Galitsyn, Mansurov, V. G., Poshevnev, V. I., Sokolov, R. A., Valisheva, N. A.

Publikováno v: Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::eb4c6166f5d936c2dcc188c22c6621bc
http://www.scopus.com/inward/record.url?eid=2-s2.0-0027795097&partnerID=MN8TOARS

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