Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Yury Kuzminykh"'
Autor:
Janne-Petteri Niemelä, Barbara Putz, Gustavo Mata-Osoro, Carlos Guerra-Nuñez, Remo N. Widmer, Nadia Rohbeck, Thomas E. J. Edwards, Max Döbeli, Krzysztof Maćkosz, Aleksandra Szkudlarek, Yury Kuzminykh, Xavier Maeder, Johann Michler, Bernhard Andreaus, Ivo Utke
Publikováno v:
ACS Applied Nano Materials. 5:6285-6296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::998dd44cacc8516ec5dfff7de59f0d8c
https://doi.org/10.1021/acsanm.2c00378
https://doi.org/10.1021/acsanm.2c00378
Publikováno v:
The Journal of Physical Chemistry C. 120:4337-4344
In atomic layer deposition processes (ALD), surface reactions of adsorbed precursor species lead to the formation of thin films. In order to achieve a well-controlled, self-limiting process, the substrate is sequentially exposed to different precurso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1137993c2f6117401dfac3738e8de7
https://doi.org/10.1021/acs.jpcc.5b10529
https://doi.org/10.1021/acs.jpcc.5b10529
Publikováno v:
The Journal of Physical Chemistry C. 119:27965-27971
Understanding the surface kinetics of precursor decomposition during thin film formation represents a key aspect in the understanding and engineering of chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. The determination of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f8dcd3e6d41d89ede2ff4218f8ae7b
https://doi.org/10.1021/acs.jpcc.5b07177
https://doi.org/10.1021/acs.jpcc.5b07177
Publikováno v:
ACS Combinatorial Science. 17:413-420
The combinatorial characterization of the growth kinetics in chemical vapor deposition processes is challenging because precise information about the local precursor flow is usually difficult to access. In consequence, combinatorial chemical vapor de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43ac9973a9db7c22ef09111defcf1cf6
https://doi.org/10.1021/acscombsci.5b00040
https://doi.org/10.1021/acscombsci.5b00040
Publikováno v:
physica status solidi (a). 212:1556-1562
Barium titanate is a very promising material for the integration of optical communication into electronic integrated circuits. For a successful integration into CMOS compatible technology, a growth process has to be found which allows forming crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6202738ec5c23387237d8dc24748d056
https://doi.org/10.1002/pssa.201532326
https://doi.org/10.1002/pssa.201532326
Publikováno v:
ACS Applied Materials & Interfaces. 7:9736-9743
A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8278fe9a9e36e81a7f0826a3e28d6062
https://doi.org/10.1021/acsami.5b01561
https://doi.org/10.1021/acsami.5b01561
Publikováno v:
Chemistry of Materials. 27:1604-1611
Chemical vapor deposition (CVD) techniques rely on high temperatures to activate the chemical decomposition of precursors on the substrate surface. Lower temperatures are applied in atomic layer deposition (ALD), where deliberate pyrolysis of the pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76038d995ac89dd453ae630ad38b396a
https://doi.org/10.1021/cm504216p
https://doi.org/10.1021/cm504216p
Publikováno v:
Thin Solid Films
A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was emp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7568cfc94ecbb2ee8a16026cd00fa493
Autor:
E. Wagner, Yury Kuzminykh, Paul Muralt, Pierre Brodard, Silviu Cosmin Sandu, Patrik Hoffmann, S.A. Rushworth, Ali Dabirian, Scott Harada, Giacomo Benvenuti
Publikováno v:
Crystal Growth & Design. 11:203-209
Combinatorial high-vacuum chemical vapor deposition (HV-CVD) was used to identify the conditions required to obtain hafnium-doped lithium niobate thin films on sapphire {001} substrates. Niobium tetraethoxydimethylaminoethoxide (Nb(OEt)(4)(dmae)), li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5643cb52309c77d24b68fe5250a3515b
https://doi.org/10.1021/cg1011583
https://doi.org/10.1021/cg1011583
Publikováno v:
ECS Transactions. 25:1093-1098
The deposition of amorphous alumina (Al2O3) films on four inch wafers with high deposition rate (up to 50 nm/min) by an advanced HV-CVD technique is discussed. Amorphous nature of the films is confirmed by X-ray diffraction. Refractive index of the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cb7d3d2124179e9bd1a14f8ce170148
https://doi.org/10.1149/1.3207711
https://doi.org/10.1149/1.3207711