Zobrazeno 1 - 10
of 136
pro vyhledávání: '"Yuriy V. Pershin"'
Autor:
Ruslan D. Yamaletdinov, Oleg V. Ivakhnenko, Olga V. Sedelnikova, Sergey N. Shevchenko, Yuriy V. Pershin
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-13 (2018)
Abstract Using computational and theoretical approaches, we investigate the snap-through transition of buckled graphene membranes. Our main interest is related to the possibility of using the buckled membrane as a plate of capacitor with memory (memc
Externí odkaz:
https://doaj.org/article/90805cd3a792404abb501c4faff29a1f
Publikováno v:
SpringerBriefs in Physics ISBN: 9783031256240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4108cae655dabdd2c2bd0229bb14cee5
https://doi.org/10.1007/978-3-031-25625-7_2
https://doi.org/10.1007/978-3-031-25625-7_2
Publikováno v:
SpringerBriefs in Physics ISBN: 9783031256240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f195e15362cb8767d1220ccaad01b17
https://doi.org/10.1007/978-3-031-25625-7
https://doi.org/10.1007/978-3-031-25625-7
Publikováno v:
SpringerBriefs in Physics ISBN: 9783031256240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfbb414242d2effc4e356df082097fbc
https://doi.org/10.1007/978-3-031-25625-7_3
https://doi.org/10.1007/978-3-031-25625-7_3
Publikováno v:
SpringerBriefs in Physics ISBN: 9783031256240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a9af42518929f11dc9e9bd4a19367f3
https://doi.org/10.1007/978-3-031-25625-7_1
https://doi.org/10.1007/978-3-031-25625-7_1
Publikováno v:
SpringerBriefs in Physics ISBN: 9783031256240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95a6679b7eb2fd34b6d85520ba8f616
https://doi.org/10.1007/978-3-031-25625-7_4
https://doi.org/10.1007/978-3-031-25625-7_4
Publikováno v:
SpringerBriefs in Physics ISBN: 9783031256240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bd5445ee43a80327e3f5dea543aefe5
https://doi.org/10.1007/978-3-031-25625-7_5
https://doi.org/10.1007/978-3-031-25625-7_5
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:1802-1806
In this paper, we classify the instantaneous response of resistors with memory into three types: linear (L), separable nonlinear (SN), and non-separable nonlinear (NSN). A particular model of an NSN-type memristive device is introduced and used to de
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:214-218
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or indu
Autor:
Vincent J. Dowling, Yuriy V. Pershin
Publikováno v:
Physical Review E. 106
The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is th