Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yuriy Shreter"'
Autor:
Vladislav Voronenkov, Andrey Zubrilov, Ruslan Gorbunov, Philippe Latyshev, Natalia Bochkareva, Y. S. Lelikov, Y. T. Rebane, Yuriy Shreter, Alexander Tsyuk
Publikováno v:
ECS Transactions. 35:91-97
GaN is widely used in emerging solid state lighting industry, blue lasers, power and RF electronics. Due to the lack of native substrates, most GaN devices are grown on sapphire. Lattice constant in c-plane of GaN and sapphire differs by 14%. High la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c27ed684ed9981d1d42a88fa2d21fa7a
https://doi.org/10.1149/1.3570850
https://doi.org/10.1149/1.3570850
Autor:
Y. T. Rebane, Vladislav Voronenkov, Alexander Tsyuk, Natalia Bochkareva, Ruslan Gorbunov, Yuriy Shreter, Philippe Latyshev, Andrey Zubrilov, Y. S. Lelikov
Publikováno v:
ECS Meeting Abstracts. :1474-1474
The effect of growth parameters on stress in thick GaN films grown on sapphire by HVPE method was investigated. We have found two modes of growth with different growth stress. Films grown in one mode have rough surfaces and low stress. The second mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::600a0e35bab88065850a62248190182f
https://doi.org/10.1149/ma2011-01/24/1474
https://doi.org/10.1149/ma2011-01/24/1474