Zobrazeno 1 - 10
of 129
pro vyhledávání: '"Yuriy I Mazur"'
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Autor:
Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 13, Iss 11, p 1557 (2023)
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques.
Externí odkaz:
https://doaj.org/article/83d97a843ebc47b791ad56660221ca9e
Autor:
Mirsaeid Sarollahi, Mohammad Zamani-Alavijeh, Manal A. Aldawsari, Rohith Allaparthi, Md Helal Uddin Maruf, Malak Refaei, Reem Alhelais, Yuriy I. Mazur, Morgan E. Ware
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
The temperature dependence of Λ-graded InGaN solar cells is studied through simulation using nextnano software. Λ-Graded structures have been designed by increasing and then decreasing the indium composition in epitaxial InGaN layers. Due to polari
Externí odkaz:
https://doaj.org/article/0dc73e4de1794e20b3e5b2e55ae1a9f9
Autor:
Daqian Guo, Jian Huang, Mourad Benamara, Yuriy I. Mazur, Zhuo Deng, Gregory J. Salamo, Huiyun Liu, Baile Chen, Jiang Wu
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-6
Autor:
Qing Yuan, Baolai Liang, Chuan Zhou, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a thick GaAs spacer, but with varied areal densities of SQDs con
Externí odkaz:
https://doaj.org/article/1a7030e06efc4fc6accc3c26db1ec4c1
Autor:
Jingtao Liu, Shiping Luo, Xiaohui Liu, Ying Wang, Chunsheng Wang, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Publikováno v:
Crystals, Vol 12, Iss 3, p 319 (2022)
Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In0.4Ga0.6As surface q
Externí odkaz:
https://doaj.org/article/c3a8a6e2d8dd4079b8909ac51e956cc3
Autor:
Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Yuriy I. Mazur, Mourad Benamara, Morgan E. Ware, Gregory J. Salamo
Publikováno v:
Materials & Design, Vol 190, Iss , Pp - (2020)
In this work, we present the investigation of InN/GaN multiple-quantum-well (MQW) growth by plasma-assisted molecular beam epitaxy using in-situ reflection high-energy electron diffraction (RHEED) to monitor the growth process. The analysis of the RH
Externí odkaz:
https://doaj.org/article/5ce984843fc144559ed1a85875c20fd9
Autor:
Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle, Andrian Kuchuk, Yuriy I. Mazur, Gregory Salamo, Shui-Qing Yu
Publikováno v:
Crystals, Vol 11, Iss 8, p 905 (2021)
We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 °C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influ
Externí odkaz:
https://doaj.org/article/52cc0d89022f4e5d8b1a6a7e8fdab34a
Autor:
Hang Li, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Publikováno v:
Applied Physics Letters. 122
Exciton dynamics in a GaAsSb/GaAs quantum well (QW) heterostructure were investigated via both steady state and transient photoluminescence. The measurements at 10 K demonstrated the coexistence of localized excitons (LEs) and free excitons (FEs), wh