Zobrazeno 1 - 10 of 51 pro vyhledávání: '"Yuriko Seino"'
1
Perpendicular Orientation Control without Interfacial Treatment of RAFT-Synthesized High-ﾏ� Block Copolymer Thin Films with Sub-10 nm Features Prepared via Thermal Annealing
Autor: Lei Wang, Naoko Kihara, Yuriko Seino, Yasunari Yoshimura, Yuki Tanaka, Alvin Chandra, Yoshinori Suzuki, Rina Maeda, Hideaki Yokoyama, Christopher K. Ober, Yuusuke Kasahara, Ken Miyagi, Hiroki Takano, Hironobu Sato, Ryuichi Nakatani, Shinya Minegishi, Teruaki Hayakawa, Tsukasa Azuma
Publikováno v: ACS Applied Materials & Interfaces. 9:31266-31278
In this study, a series of perpendicular lamellae-forming poly(polyhedral oligomeric silsesquioxane methacrylate-block-2,2,2-trifluoroethyl methacrylate)s (PMAPOSS-b-PTFEMAs) was developed based on the bottom-up concept of creating a simple yet effec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0f0368afd5fc34079f73e36c2b99906
https://doi.org/10.1021/acsami.6b16129
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5
Defect dynamics in directed self-assembly of block copolymers (Conference Presentation)
Autor: Kenji Yoshimoto, Katsuyoshi Kodera, Mikihito Takenaka, Terumasa Kosaka, Masayuki Shiraishi, Takuya Omosu, Ken Miyagi, Yusuke Kasahara, Toshiyuki Himi, Alvin Chandra, Hironobu Sato, Ryota Matsuki, Ryuichi Nakatani, Yuriko Seino, Seiji Nagahara, Tsukasa Azuma, Teruaki Hayakawa
Publikováno v: Advances in Patterning Materials and Processes XXXV.
Directed self-assembly (DSA) of block copolymers (BCPs) is a lithographic technique that is expected to be mutually complimentary with ArF immersion lithography, EUV lithography, electron beam direct writing, or nanoimprint for sub-15 nm line pattern
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70158ee6885963df6a4f6758981f7835
https://doi.org/10.1117/12.2297310
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6
A simulation study on bridge defects in lamellae-forming diblock copolymers
Autor: Katsuyoshi Kodera, Ken Miyagi, Hironobu Sato, Yuriko Seino, Tsukasa Azuma, Masayuki Shiraishi, Yusuke Kasahara
Publikováno v: Advances in Patterning Materials and Processes XXXV.
In this paper we will describe a self-consistent field theory simulation study on bridge defects in lamellae-forming diblock copolymers. Because the bridge defects are buried three-dimensional defects formed in the diblock copolymer film, it is diffi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b0db860b581abecd0404e5272c44a82c
https://doi.org/10.1117/12.2297287
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7
Application of Directed Self-Assembly Lithography to Semiconductor Device Manufacturing Process
Autor: Yuriko Seino, Hironobu Sato, Ayako Kawanishi, Masahiro Kanno, Tsukasa Azuma, Hirokazu Kato, Katsutoshi Kobayashi, Hiroki Yonemitsu
Publikováno v: Electronics and Communications in Japan. 98:59-64
SUMMARY Directed self-assembly (DSA) lithography has recently entered the spotlight as one of the most promising new generation lithography candidates, with the potential for fabrication of semiconductor device patterns down to sub-30 nm. In this rep
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9299bbe5aa66e1953c3ce4909165c40
https://doi.org/10.1002/ecj.11691
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8
A novel simple sub-15nm line-and-space patterning process flow using directed self-assembly technology
Autor: Katsutoshi Kobayashi, Tomoharu Fujiwara, Toshikatsu Tobana, Katsuyoshi Kodera, Hironobu Sato, Shinya Minegishi, Naoko Kihara, Yoshiaki Kawamonzen, Hideki Kanai, Yusuke Kasahara, Yuriko Seino, Tsukasa Azuma, Ken Miyagi, Noriyuki Hirayanagi
Publikováno v: Microelectronic Engineering. 134:27-32
Display Omitted We report a novel simple sub-15nm L/S patterning process using PS-b-PMMA for DSA lithography.The HP 15nm L/S DSA patterning was demonstrated on 300mm wafer.3D BCP internal defect could be minimized by an optimization of material and a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ebf4e31c233af089872dcf543df47fe
https://doi.org/10.1016/j.mee.2015.01.031
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