Electron properties in thin MoS2 films grown by CVD method

Autor: Egor Sharin, Yurii Grigor'ev, Karol Hricovini, O. Heckmann, Christine Richter, Waly Ndiaye, Evgenii Boiakinov

Publikováno v: 9TH INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING: Dedicated to the 75th Anniversary of Professor V.N. Vragov
9TH INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING: Dedicated to the 75th Anniversary of Professor V.N. Vragov, Mar 2021, Yakutsk, Russia. pp.050004, ⟨10.1063/5.0043088⟩

Monolayer MoS2 is a promising two-dimensional material for electronic and optoelectronic devices. In this work, chemical vapor deposition (CVD) is performed for the synthesis of MoS2 films on SiO2. Electron properties of obtained samples are examined

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be2cb3d49b4ad2cf002d75b7e5e46e05
https://hal.science/hal-03845570