Zobrazeno 1 - 3
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pro vyhledávání: '"Yurie Akasaka"'
Publikováno v:
AIP Advances, Vol 5, Iss 6, Pp 067128-067128-7 (2015)
Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from depth profiles of oxidized HfO2/SiC structures. With longer oxidation times, surface SiO2 growth tr
Externí odkaz:
https://doaj.org/article/c0b38b41d38f42e08d011e6533af236a
Publikováno v:
Materials Science Forum. :553-556
To verify the Si emission phenomenon during oxidation of SiC, the behavior of Si atoms was investigated using HfO2/SiC structures. At low oxygen pressure, i.e. the oxidation condition predominant to active oxidation, Si emission into oxide layer and
Publikováno v:
AIP Advances, Vol 5, Iss 6, Pp 067128-067128-7 (2015)
Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from depth profiles of oxidized HfO2/SiC structures. With longer oxidation times, surface SiO2 growth tr