Výsledky vyhledávání - "Yuri. I. Denisenko"

Synergistic effects of deformation and solid-state reactions in Si with buried glass layer initiated by annealing in non-isothermal reactor

Autor: Yuri I. Denisenko

Publikováno v: International Conference on Micro- and Nano-Electronics 2018.

This study presents a scientific opinion on differences in formation of self-organizing dislocation structures in (100) - oriented Si specimens subjected to co-implantation by P+ and O2 + ions and 2-step annealing process. At the first step, the spec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7bcfbfa5652b1a801805c09a27edd967
https://doi.org/10.1117/12.2521443

Zobrazit plný text záznamu

Formation of nanoporous structure in silicon substrate using two-stage annealing process

Autor: Yuri I. Denisenko, Valery I. Rudakov

Publikováno v: SPIE Proceedings.

The experimental results relating to exciting the defect–impurity subsystem of a (001)-oriented Si substrate containing ion-synthesized buried Si:P:O layer and transformation of the material into a porous medium are represented. After coimplantatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4be12e7f145303d48323d5b9b5dc83f5
https://doi.org/10.1117/12.2267071

Zobrazit plný text záznamu

Features of evolution of implanted profiles during RTA in non-isothermal reactor

Autor: Valery I. Rudakov, Vladimir V. Ovcharov, Alexander A. Victorov, Boris V. Mochalov, Yuri I. Denisenko

Publikováno v: SPIE Proceedings.

The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was established, applied temperature gradient i�L gives rise to relative shift of non-isothermal concentration profiles, corresponding t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e27697fd7ff844cb05d39c726555d08c
https://doi.org/10.1117/12.802484

Zobrazit plný text záznamu

Diffusion and phase formation in ternary silicate systems framed by an ion bombardment

Autor: Eduard Yu. Buchin, Roman V. Selyukov, Yuri. I. Denisenko, Sergey A. Krivelevich

Publikováno v: SPIE Proceedings.

New technology of obtaining of SOT-structures by ionic synthesis of buried silica glass layers has been proposed. This technology is based on physical processes of formation of a new phase that appears in ion-synthesized Si-B-O and Si-P-0 systems at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a02be439eae6a6204cd7e0848b00d28
https://doi.org/10.1117/12.677013

Zobrazit plný text záznamu

Use of thermomigration in MEMS technology

Autor: Eduard Yu. Buchin, Yuri I. Denisenko

Publikováno v: SPIE Proceedings.

The physical principles of thermomigration process and technical approaches utilizing this process at fabrication various kinds of silicon-based MEMS devices have been presented. The specific examples applied to silicon bulk micromachining, producing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::648d7ef527944dc4f6a11c24e583423b
https://doi.org/10.1117/12.683500

Zobrazit plný text záznamu

Ionic synthesis of silica-based glasses: prospect, simulation and applied aspects

Autor: Yuri. I. Denisenko, Sergey A. Krivelevich, Andrey A. Tsyrulev

Publikováno v: SPIE Proceedings.

The limitations attributed to SIMOX material synthesized with using of an ion implantation of oxygen are surveyed. A new theoretical approach on the base of the phase transitions theory of Ginsburg - Landau is advanced. It is shown that a basic impro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd060e7ffa26f520f9295b128e42f0c5
https://doi.org/10.1117/12.557301

Zobrazit plný text záznamu